Chu R. Wie
Affiliations: | Electrical Engineering | State University of New York, Buffalo, Buffalo, NY, United States |
Area:
Electronics and Electrical EngineeringGoogle:
"Chu Wie"Children
Sign in to add traineeInmook Na | grad student | 2004 | SUNY Buffalo |
Mun-Soo Park | grad student | 2004 | SUNY Buffalo |
Zhao Tang | grad student | 2010 | SUNY Buffalo |
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Publications
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Park M, Na I, Wie CR. (2005) A comparison of ionizing radiation and high field stress effects in n-channel power vertical double-diffused metal-oxide-semiconductor field-effect transistors Journal of Applied Physics. 97: 14503 |
Wang Z, Park M, Gillberg JE, et al. (2003) Cell structure and saturation effects of radiation-hardened power VDMOSFET devices under extreme dose X-ray irradiation Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms. 211: 251-258 |
Park MS, Wie CR. (2001) Study of radiation effects in γ-ray irradiated power VDMOSFET by DCIV technique Ieee Transactions On Nuclear Science. 48: 2285-2293 |
Huang ZC, Wie CR, Varriano JA, et al. (1995) Phosphorus-vacancy-related deep levels in GaInP layers Journal of Applied Physics. 77: 1587-1590 |
Huang ZC, Eissler E, Wie CR. (1995) Role of cadmium vacancy-related defects in CdTe nuclear detectors Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms. 100: 507-510 |
Wie CR. (1994) High resolution x-ray diffraction characterization of semiconductor structures Materials Science & Engineering R-Reports. 13: 1-56 |
Xie K, Wie CR, Varriano JA, et al. (1994) Improvement of GaAs/AlGaAs quantum well laser diodes by rapid thermal annealing Journal of Electronic Materials. 23: 1-6 |
Huang ZC, Wie CR. (1993) Contact-Related Deep States in AI-GaInP/GaAs Interface Mrs Proceedings. 325 |
Huang ZC, Wie CR, Varriano JA, et al. (1993) Phosphorus-Vacancy-Related Deep Levels in Gainp Layers Grown by Molecular Beam Epitaxy Mrs Proceedings. 325: 137 |
Huang ZC, Wie CR, Johnstone DK, et al. (1993) Effects of lattice mismatch and thermal annealing on deep traps and interface states in Ga |