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Jonathan Stohs, Ph.D.

Affiliations: 
2000 University of New Mexico, Albuquerque, NM, United States 
Area:
Optics Physics
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Steven R. J. Brueck grad student 2000 Univ. of New Mexico
 (Epitaxial structure dependence of gain, refractive index, and linewidth enhancement factor in gallium arsenide and indium gallium arsenide broad-area quantum well lasers.)

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Publications

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Stohs J, Bessert DJ, Gallant DJ, et al. (2001) Gain, refractive index change, and linewidth enhancement factor in broad-area GaAs and InGaAs quantum-well lasers Ieee Journal of Quantum Electronics. 37: 1449-1459
Ongstad AP, Dente GC, Tilton ML, et al. (1998) Determination of carrier lifetimes using Hakki-Paoli gain data Proceedings of Spie - the International Society For Optical Engineering. 3284: 28-34
Ongstad AP, Dente GC, Tilton ML, et al. (1998) Determination of carrier lifetimes using Hakki–Paoli gain data Applied Physics Letters. 72: 836-838
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