Xianfeng Ni, Ph.D.
Affiliations: | 2010 | Engineering | Virginia Commonwealth University, Richmond, VA, United States |
Area:
Electronics and Electrical EngineeringGoogle:
"Xianfeng Ni"Parents
Sign in to add mentor| Hadis Morkoç | grad student | 2010 | VCU | |
| (Growth and characterization of non-polar gallium nitride materials and investigation of efficiency droop in indium gallium nitride light emitting diodes.) | ||||
BETA: Related publications
See more...
Publications
|
You can help our author matching system! If you notice any publications incorrectly attributed to this author, please sign in and mark matches as correct or incorrect. |
| Matulionis A, Liberis J, Matulionienė I, et al. (2011) Signature of Hot Phonons in Reliability of Nitride Transistors and Signal Delay Acta Physica Polonica A. 119: 225-227 |
| Gao H, Lee J, Ni X, et al. (2011) Deep inductively coupled plasma etching of ELO-GaN grown with high fill factor Proceedings of Spie. 7939: 793920 |
| Foussekis M, Ni X, Morkoç H, et al. (2011) Kelvin probe measurements of p-type GaN Proceedings of Spie. 7939 |
| Leach JH, Biswas N, Paskova T, et al. (2011) Effect of substrate offcut on AlGaN/GaN HFET structures on bulk GaN substrates Proceedings of Spie - the International Society For Optical Engineering. 7939 |
| Liu HY, Li X, Liu S, et al. (2011) Optimization of ZnO:Ga properties for application as a transparent conducting oxide in InGaN-based light-emitting diodes Proceedings of Spie. 7939 |
| Li X, Ni X, Liu HY, et al. (2011) On the reduction of efficiency loss in polar c -plane and non-polar m -plane InGaN light emitting diodes Physica Status Solidi (C) Current Topics in Solid State Physics. 8: 1560-1563 |
| Liu HY, Li X, Liu S, et al. (2011) InGaN based light emitting diodes utilizing Ga doped ZnO as a highly transparent contact to p-GaN Physica Status Solidi (C). 8: 1548-1551 |
| Monemar B, Paskov P, Pozina G, et al. (2011) Photoluminescence of Mg-doped m-plane GaN grown by MOCVD on bulk GaN substrates Physica Status Solidi a-Applications and Materials Science. 208: 1532-1534 |
| Wu M, Leach JH, Ni X, et al. (2010) InAlN/GaN heterostructure field-effect transistors on Fe-doped semi-insulating GaN substrates Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 28: 908-911 |
| Özgür Ü, Ni X, Li X, et al. (2010) Ballistic transport in InGaN-based LEDs: impact on efficiency Semiconductor Science and Technology. 26: 014022 |