Nelson Tansu
Affiliations: | Electrical Engineering | Lehigh University, Bethlehem, PA, United States |
Area:
Electronics and Electrical EngineeringGoogle:
"Nelson Tansu"Parents
Sign in to add mentorDan McCammon | research assistant | 1995-1996 | UW Madison (Physics Tree) | |
(Undergraduate Research Assistant) | ||||
Robert Joynt | research assistant | 1996-1997 | UW Madison (Physics Tree) | |
(Undergraduate Research Assistant) | ||||
John G. Webster | research assistant | 1997-1998 | UW Madison (Chemistry Tree) | |
(Undergraduate Research Assistant) | ||||
Luke J. Mawst | grad student | 1998-2003 | UW Madison | |
(Novel quantum well gallium arsenide-based lasers for all transmission windows in optical communication.) |
Children
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Publications
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Borovac D, Sun W, Tan C, et al. (2020) Electronic properties of dilute-As InGaNAs alloys: A first-principles study Journal of Applied Physics. 127: 015103 |
Ogidi-Ekoko ON, Goodrich JC, Howzen AJ, et al. (2020) Electrical Properties of MgO/GaN Metal-Oxide-Semiconductor Structures Solid-State Electronics. 107881 |
Borovac D, Sun W, Peart MR, et al. (2020) Low background doping in AlInN grown on GaN via metalorganic vapor phase epitaxy Journal of Crystal Growth. 548: 125847 |
Al Muyeed SA, Wei X, Borovac D, et al. (2020) Controlled growth of InGaN quantum dots on photoelectrochemically etched InGaN quantum dot templates Journal of Crystal Growth. 540: 125652 |
Borovac D, Sun W, Song R, et al. (2020) On the thermal stability of nearly lattice-matched AlInN films grown on GaN via MOVPE Journal of Crystal Growth. 533: 125469 |
Sun W, Kim H, Mawst LJ, et al. (2020) Interplay of GaAsP barrier and strain compensation in InGaAs quantum well at near-critical thickness Journal of Crystal Growth. 531: 125381 |
Goodrich JC, Borovac D, Tan CK, et al. (2019) Band Anti-Crossing Model in Dilute-As GaNAs Alloys. Scientific Reports. 9: 5128 |
Al Muyeed SA, Sun W, Peart MR, et al. (2019) Recombination rates in green-yellow InGaN-based multiple quantum wells with AlGaN interlayers Journal of Applied Physics. 126: 213106 |
Fu H, Goodrich JC, Ogidi-Ekoko O, et al. (2019) Type-II AlInN/ZnGeN2 quantum wells for ultraviolet laser diodes Journal of Applied Physics. 126: 133103 |
Fu H, Sun W, Ogidi-Ekoko O, et al. (2019) Gain characteristics of InGaN quantum wells with AlGaInN barriers Aip Advances. 9: 045013 |