Dong-Seon Lee, Ph.D.

Affiliations: 
2002 University of Cincinnati, Cincinnati, OH 
Area:
Electronics and Electrical Engineering
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"Dong-Seon Lee"

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Andrew Steckl grad student 2002 University of Cincinnati
 (Growth and mechanisms for rare-earth-doped gallium nitride electroluminescent devices (ELDs).)
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Publications

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Kim J, Jang JS, Shin SW, et al. (2023) Novel Mg- and Ga-doped ZnO/Li-Doped Graphene Oxide Transparent Electrode/Electron-Transporting Layer Combinations for High-Performance Thin-Film Solar Cells. Small (Weinheim An Der Bergstrasse, Germany). e2207966
Jeong WL, Kim KP, Kim J, et al. (2020) Impact of Na Doping on the Carrier Transport Path in Polycrystalline Flexible CuZnSn(S,Se) Solar Cells. Advanced Science (Weinheim, Baden-Wurttemberg, Germany). 7: 1903085
Huang Z, Zhong Z, Wang H, et al. (2020) Enhanced Emission of Deep Ultraviolet Light-Emitting Diodes Through Using Work Function Tunable Cu Nanowires as Top Transparent Electrode. The Journal of Physical Chemistry Letters
Kim SJ, Lee KJ, Oh S, et al. (2019) Enhanced performance of InGaN/GaN MQW LED with strain-relaxing Ga-doped ZnO transparent conducting layer. Optics Express. 27: A458-A467
Kang CM, Kang SJ, Mun SH, et al. (2017) Monolithic integration of AlGaInP-based red and InGaN-based green LEDs via adhesive bonding for multicolor emission. Scientific Reports. 7: 10333
Bae SY, Min JW, Hwang HY, et al. (2017) III-nitride core-shell nanorod array on quartz substrates. Scientific Reports. 7: 45345
Kong DJ, Kang CM, Lee JY, et al. (2016) Color tunable monolithic InGaN/GaN LED having a multi-junction structure. Optics Express. 24: A667-A673
Min JW, Hwang HY, Kang EK, et al. (2016) Optical and structural properties of microcrystalline GaN on an amorphous substrate prepared by a combination of molecular beam epitaxy and metal-organic chemical vapor deposition Japanese Journal of Applied Physics. 55
Jeong H, Park DJ, Lee HS, et al. (2014) Light-extraction enhancement of a GaN-based LED covered with ZnO nanorod arrays. Nanoscale. 6: 4371-8
Kwak Y, Lee J, Choi H, et al. (2013) Improved light emission through an AlGaN coalescence layer of 365-nm ultraviolet lighting-emitting diodes on patterned sapphire substrates Journal of the Korean Physical Society. 62: 942-948
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