Hongping Zhao, Ph.D.
Affiliations: | 2011 | Electrical Engineering | Lehigh University, Bethlehem, PA, United States |
Area:
Electronics and Electrical EngineeringGoogle:
"Hongping Zhao"Parents
Sign in to add mentor| Nelson Tansu | grad student | 2011 | Lehigh University | |
| (Enhancement of Internal Quantum Efficiency and Optical Gain for Nitride Light-Emitting Diodes and Laser Diodes.) | ||||
Children
Sign in to add trainee| Subrina Rafique | grad student | 2017 | Case Western |
| Lu Han | grad student | 2012-2017 | Case Western |
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Publications
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| Chen Z, Zhang Y, Zhao H. (2020) Quantitative defect analysis in MOCVD GaN-on-GaN using cathodoluminescence. Optics Express. 28: 26651-26660 |
| Zhang Y, Feng Z, Karim R, et al. (2020) High-temperature low-pressure chemical vapor deposition of β-Ga2O3 Journal of Vacuum Science and Technology. 38: 50806 |
| Lee H, Zhang Y, Chen Z, et al. (2020) Design and Fabrication of Vertical GaN p-n Diode With Step-Etched Triple-Zone Junction Termination Extension Ieee Transactions On Electron Devices. 67: 3553-3557 |
| Zhang Y, Chen Z, Li W, et al. (2020) Probing unintentional Fe impurity incorporation in MOCVD homoepitaxy GaN: Toward GaN vertical power devices Journal of Applied Physics. 127: 215707 |
| Ghadi H, McGlone JF, Jackson CM, et al. (2020) Full bandgap defect state characterization of β-Ga2O3 grown by metal organic chemical vapor deposition Apl Materials. 8: 021111 |
| Haseman MS, Karim MR, Ramdin D, et al. (2020) Deep level defects and cation sublattice disorder in ZnGeN2 Journal of Applied Physics. 127: 135703 |
| Karim R, Jayatunga BHD, Zhu M, et al. (2020) Effects of cation stoichiometry on surface morphology and crystallinity of ZnGeN2 films grown on GaN by metalorganic chemical vapor deposition Aip Advances. 10: 65302 |
| Jayatunga BHD, Karim R, Lalk RA, et al. (2020) Metal–Organic Chemical Vapor Deposition of ZnGeGa2N4 Crystal Growth & Design. 20: 189-196 |
| Anhar Uddin Bhuiyan AFM, Feng Z, Johnson JM, et al. (2019) MOCVD epitaxy of β-(AlxGa1−x)2O3 thin films on (010) Ga2O3 substrates and N-type doping Applied Physics Letters. 115: 120602 |
| Feng Z, Anhar Uddin Bhuiyan AFM, Karim MR, et al. (2019) MOCVD homoepitaxy of Si-doped (010) β-Ga2O3 thin films with superior transport properties Applied Physics Letters. 114: 250601 |