Michael Kozicki
Affiliations: | Electrical Engineering | Arizona State University, Tempe, AZ, United States |
Area:
Electronics and Electrical EngineeringWebsite:
https://search.asu.edu/profile/57492Google:
"Michael Kozicki"Bio:
https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.351663
http://hdl.handle.net/1842/12108 My gratitude goes to my supervisors Mr A.M. Gundlach and Prof A.E. Owen and especially to my principal supervisor, Dr J.M. Robertson, who has been my mentor during the course of this work
Parents
Sign in to add mentorJohn M. Robertson | grad student | 1984 | Edinburgh | |
(Conductivity studies of polycrystalline-silicon films) |
Children
Sign in to add traineeChakravarthy Gopalan | grad student | 2005 | Arizona State |
Mira Park | grad student | 2005 | Arizona State |
Muralikrishnan Balakrishnan | grad student | 2006 | Arizona State |
Sunil Baliga | grad student | 2011 | Arizona State |
Deepak Kamalanathan | grad student | 2011 | Arizona State |
Sarath C. Puthenthermadam | grad student | 2011 | Arizona State |
Minghan Ren | grad student | 2011 | Arizona State |
Peter R. Pelletier | grad student | 2012 | Arizona State |
Pradeep Dandamudi | grad student | 2013 | Arizona State |
Collaborators
Sign in to add collaboratorDavid Alan Drabold | collaborator | 2000- | Arizona State (Physics Tree) |
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Publications
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Huang X, Fang R, Yang C, et al. (2019) Steep-Slope Field-Effect Transistors with AlGaN/GaN HEMT and Oxide based Threshold Switching Device. Nanotechnology |
Bartlett P, Berg AI, Bernasconi M, et al. (2019) Phase-change memories (PCM) - Experiments and modelling: general discussion. Faraday Discussions |
Ambrosi E, Bartlett P, Berg AI, et al. (2019) Electrochemical metallization ReRAMs (ECM) - Experiments and modelling: general discussion. Faraday Discussions |
Taggart JL, Jacobs-Gedrim RB, McLain ML, et al. (2019) Failure Thresholds in CBRAM Due to Total Ionizing Dose and Displacement Damage Effects Ieee Transactions On Nuclear Science. 66: 69-76 |
Subedi KN, Prasai K, Kozicki MN, et al. (2019) Structural origins of electronic conduction in amorphous copper-doped alumina Physical Review Materials. 3 |
Gonzalez-Velo Y, Patadia A, Barnaby HJ, et al. (2018) Impact of radiation induced crystallization on programmable metallization cell electrical characteristics and reliability. Faraday Discussions |
Taggart JL, Chen W, Gonzalez-Velo Y, et al. (2018) |
Fang R, Livingston I, Esqueda IS, et al. (2018) Bias temperature instability model using dynamic defect potential for predicting CMOS aging Journal of Applied Physics. 123: 225701 |
Chen W, Fang R, Barnaby HJ, et al. (2017) Total-Ionizing-Dose Effects on Resistance Stability of Programmable Metallization Cell Based Memory and Selectors Ieee Transactions On Nuclear Science. 64: 269-276 |
Chen W, Chamele N, Gonzalez-Velo Y, et al. (2017) Low-Temperature Characterization of Cu–Cu:Silica-Based Programmable Metallization Cell Ieee Electron Device Letters. 38: 1244-1247 |