Fatemeh Shahedipour-Sandvik
Affiliations: | Nanoscale Science and Engineering-Nanoscale Engineering | State University of New York, Albany, Albany, NY, United States |
Area:
Nanotechnology, Materials Science Engineering, Electronics and Electrical EngineeringGoogle:
"Fatemeh Shahedipour-Sandvik"Children
Sign in to add trainee| Muhammad Jamil | grad student | 2006 | SUNY Albany |
| James R. Grandusky | grad student | 2007 | SUNY Albany |
| Vibhu Jindal | grad student | 2008 | SUNY Albany |
| Neeraj Tripathi | grad student | 2011 | SUNY Albany |
| Mihir Tungare | grad student | 2012 | SUNY Albany |
| Puneet H. Suvarna | grad student | 2014 | SUNY Albany |
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Publications
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| McEwen B, Reshchikov MA, Rocco E, et al. (2022) MOCVD Growth and Characterization of Be-Doped GaN. Acs Applied Electronic Materials. 4: 3780-3785 |
| Meyers V, Rocco E, Hogan K, et al. (2020) Removal of Dry-Etch-Induced Surface Layer Damage from p-GaN by Photoelectrochemical Etching Journal of Electronic Materials. 49: 3481-3489 |
| Hogan K, Litz M, Shahedipour-Sandvik F. (2018) 3D GaN-based betavoltaic device design with high energy transfer efficiency. Applied Radiation and Isotopes : Including Data, Instrumentation and Methods For Use in Agriculture, Industry and Medicine. 145: 154-160 |
| Mahaboob I, Hogan K, Novak SW, et al. (2018) Influence of mask material on the electrical properties of selective area epitaxy GaN microstructures Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 36: 031203 |
| Marini J, Mahaboob I, Rocco E, et al. (2018) Polarization engineered N-polar Cs-free GaN photocathodes Journal of Applied Physics. 124: 113101 |
| Marini J, Bell LD, Shahedipour-Sandvik F. (2018) Monte Carlo simulation of III-nitride photocathodes Journal of Applied Physics. 123: 124502 |
| Mahaboob I, Marini J, Hogan K, et al. (2018) Selective Area Epitaxial Growth of Stretchable Geometry AlGaN-GaN Heterostructures Journal of Electronic Materials. 47: 6625-6634 |
| Tompkins R, Mahaboob I, Shahedipour-Sandvik F, et al. (2017) Electrical properties of AlGaN/GaN HEMTs in stretchable geometries Solid-State Electronics. 136: 36-42 |
| Marini J, Mahaboob I, Hogan K, et al. (2017) Mg Incorporation Efficiency in Pulsed MOCVD of N-Polar GaN:Mg Journal of Electronic Materials. 46: 5820-5826 |
| Nikzad S, Hoenk M, Jewell AD, et al. (2016) Single Photon Counting UV Solar-Blind Detectors Using Silicon and III-Nitride Materials. Sensors (Basel, Switzerland). 16 |