Sean M. Polvino, Ph.D.
Affiliations: | 2011 | Materials Science and Engineering | Columbia University, New York, NY |
Area:
Materials Science EngineeringGoogle:
"Sean Polvino"Parents
Sign in to add mentor| Ismail C. Noyan | grad student | 2011 | Columbia | |
| (Accuracy, Precision, and Resolution in Strain Measurements on Diffraction Instruments.) | ||||
BETA: Related publications
See more...
Publications
|
You can help our author matching system! If you notice any publications incorrectly attributed to this author, please sign in and mark matches as correct or incorrect. |
| Hruszkewycz SO, Holt MV, Allain M, et al. (2015) Efficient modeling of Bragg coherent x-ray nanobeam diffraction. Optics Letters. 40: 3241-4 |
| Murray CE, Polvino SM, Noyan IC, et al. (2013) Probing strain at the nanoscale with X-ray diffraction in microelectronic materials induced by stressor elements Thin Solid Films. 530: 85-90 |
| Murray CE, Ying A, Polvino SM, et al. (2011) Nanoscale silicon-on-insulator deformation induced by stressed liner structures Journal of Applied Physics. 109 |
| Murray CE, Ying AJ, Polvino SM, et al. (2010) Nanoscale strain characterization in microelectronic materials using X-ray diffraction Powder Diffraction. 25: 108-113 |
| Murray CE, Ren Z, Ying A, et al. (2009) Strain measured in a silicon-on-insulator, complementary metal-oxide-semiconductor device channel induced by embedded silicon-carbon source/drain regions Applied Physics Letters. 94 |
| Murray CE, Polvino SM, Noyan IC, et al. (2008) Real-space strain mapping of SOI features using microbeam X-ray diffraction Powder Diffraction. 23: 106-108 |
| Murray CE, Saenger KL, Kalenci O, et al. (2008) Submicron mapping of silicon-on-insulator strain distributions induced by stressed liner structures Journal of Applied Physics. 104 |
| Polvino SM, Murray CE, Kalenci O, et al. (2008) Synchrotron microbeam x-ray radiation damage in semiconductor layers Applied Physics Letters. 92 |
| Murray CE, Sankarapandian M, Polvino SM, et al. (2007) Submicron mapping of strained silicon-on-insulator features induced by shallow-trench-isolation structures Applied Physics Letters. 90 |