Benedict Y. Johnson, Ph.D.
Affiliations: | 2001 | University of Arizona, Tucson, AZ |
Area:
Materials Science EngineeringGoogle:
"Benedict Johnson"Parents
Sign in to add mentor| Supapan Seraphin | grad student | 2001 | University of Arizona | |
| (Correlation of the microstructure and processing conditions of ultra-thin oxygen -implanted silicon -on -insulator materials.) | ||||
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| Johnson B, Jeoung JS, Anderson P, et al. (2002) Evolution of microstructure during annealing of low-dose SIMOX wafers implanted at 65 keV Journal of Materials Science: Materials in Electronics. 13: 303-308 |
| Johnson B, Tan Y, Anderson P, et al. (2001) The Effects of Surface Capping during Annealing on the Microstructure of Ultrathin SIMOX Materials Journal of the Electrochemical Society. 148 |
| Tan Y, Johnson B, Seraphin S, et al. (2001) Effect of annealing conditions on the formation of low-dose SIMOX structures implanted at 190 keV Journal of Materials Science: Materials in Electronics. 12: 537-542 |
| Jeoung JS, Johnson B, Seraphin S. (2001) Growth of Oxygen Precipitates in Low-Dose Low-Energy Simox Microscopy and Microanalysis. 7: 562-563 |
| Johnson B, Anderson P, Tan Y, et al. (2000) Effect Of Capping Layer During Annealing of Low-Dose Lowenergy Simox Materials Microscopy and Microanalysis. 6: 1090-1091 |
| Tan Y, Johnson B, Seraphin S, et al. (2000) Defect Dynamics in Simox Structures as a Function of the Annealing Parameters Microscopy and Microanalysis. 6: 1086-1087 |
| Jiao J, Johnson B, Seraphin S, et al. (2000) Formation of Si islands in the buried oxide layers of ultra-thin SIMOX structures implanted at 65 keV Materials Science and Engineering B: Solid-State Materials For Advanced Technology. 72: 150-155 |
| Johnson B, Jiao J, Seraphin S, et al. (1999) Control of Si-Island Free Ultra-Thin Simox Structures by Implant Energy and Oxygen Dose Microscopy and Microanalysis. 5: 746-747 |
| Wilson T, Jiao J, Seraphin S, et al. (1999) Effects of Protective Capping on Ultra-Thin SIMOX Structures Microscopy and Microanalysis. 5: 744-745 |