Manish C. Prasad, Ph.D.
Affiliations: | 2004 | University of Pennsylvania, Philadelphia, PA, United States |
Area:
Chemical Engineering, Condensed Matter Physics, Materials Science EngineeringGoogle:
"Manish Prasad"Parents
Sign in to add mentor| Talid Sinno | grad student | 2004 | Penn | |
| (Multiscale modeling and simulation of aggregation in crystalline semiconductor materials.) | ||||
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Publications
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| Conforti PF, Prasad M, Garrison BJ. (2008) A molecular dynamics study of the effects of the inclusion of dopants on ablation in polymethyl methacrylate. Physical Chemistry Chemical Physics : Pccp. 10: 6002-8 |
| Kapur SS, Prasad M, Crocker JC, et al. (2005) Role of configurational entropy in the thermodynamics of clusters of point defects in crystalline solids Physical Review B - Condensed Matter and Materials Physics. 72 |
| Prasad M, Sinno T. (2005) Feature activated molecular dynamics: Parallelization and application to systems with globally varying mechanical fields Journal of Computer-Aided Materials Design. 12: 17-34 |
| Prasad M, Sinno T. (2004) Feature activated molecular dynamics: an efficient approach for atomistic simulation of solid-state aggregation phenomena. The Journal of Chemical Physics. 121: 8699-710 |
| Kapur SS, Prasad M, Sinno T. (2004) Carbon-mediated aggregation of self-interstitials in silicon: A large-scale molecular dynamics study Physical Review B - Condensed Matter and Materials Physics. 69 |
| Sinno T, Prasad M. (2004) Internally consistent verification of mean-field models for aggregation using large-scale molecular dynamics Molecular Physics. 102: 395-403 |
| Prasad M, Sinno TR. (2003) Internally consistent approach for modeling solid-state aggregation. II. Mean-field representation of atomistic processes Physical Review B. 68: 45207 |
| Prasad M, Sinno TR. (2003) Internally Consistent Approach for Modeling Solid-State Aggregation: I. Atomistic Calculations of Vacancy Clustering in Silicon Physical Review B. 68: 45206 |
| Prasad M, Sinno T. (2002) Atomistic-to-continuum description of vacancy cluster properties in crystalline silicon Applied Physics Letters. 80: 1951-1953 |