Aleksey Koudymov, Ph.D.
Affiliations: | 2003 | University of South Carolina, Columbia, SC |
Area:
Electronics and Electrical EngineeringGoogle:
"Aleksey Koudymov"Parents
Sign in to add mentor| Grigory S. Simin | grad student | 2003 | University of South Carolina | |
| (Current collapse in III-N heterostructure transistors.) | ||||
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Publications
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| Bhalerao S, Koudymov A, Shur M, et al. (2011) Compact capacitance model for printed thin film transistors with non-ideal contacts International Journal of High Speed Electronics and Systems. 20: 801-813 |
| Koudymov A. (2011) Dynamic model of AlGaN/GaN HFET for high voltage switching Solid-State Electronics. 56: 135-140 |
| Simin G, Khan B, Wang J, et al. (2009) Multigate GaN RF switches with capacitively coupled contacts Ieee Electron Device Letters. 30: 895-897 |
| Koudymov A, Pala N, Tokranov V, et al. (2009) HfO2-III-nitride RF switch with capacitively coupled contacts Ieee Electron Device Letters. 30: 478-480 |
| Koudymov A, Pala N, Tokranov V, et al. (2009) RF transmission line method for wide-bandgap heterostructures Ieee Electron Device Letters. 30: 433-435 |
| Simin G, Koudymov A, Yang Z, et al. (2009) Cryogenic RF switch using III-nitride MOSHFETs Electronics Letters. 45: 207-208 |
| Koudymov A, Shur M. (2008) Non-ideal current transport in heterostructure field effect transistors International Journal of High Speed Electronics and Systems. 18: 935-947 |
| Koudymov A, Shur MS, Simin G, et al. (2008) Analytical HFET I-V model in presence of current collapse Ieee Transactions On Electron Devices. 55: 712-720 |
| Popov VV, Koudymov AN, Shur M, et al. (2008) Tuning of ungated plasmons by a gate in the field-effect transistor with two-dimensional electron channel Journal of Applied Physics. 104 |
| Pala N, Hu X, Deng J, et al. (2008) Drain-to-gate field engineering for improved frequency response of GaN-based HEMTs Solid-State Electronics. 52: 1217-1220 |