Ayden Maralani, Ph.D.

Affiliations: 
2009 Electrical and Computer Engineering Mississippi State University, Starkville, MS, United States 
Area:
Electronics and Electrical Engineering
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Michael S. Mazzola grad student 2009 Mississippi State University
 (Design of operational amplifiers and utilizing silicon carbide JFET for analog design.)
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Publications

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Shao S, Lien WC, Maralani A, et al. (2015) 4H-silicon carbide p-n diode for high temperature (600 °C) environment applications Materials Science Forum. 821: 636-639
Maralani A, Lien WC, Zhang N, et al. (2014) Silicon carbide transistors for IC design applications up to 600 °C Materials Science Forum. 778: 1126-1129
Zhang N, Rao Y, Xu N, et al. (2014) Characterization of 4H-SiC Bipolar Junction Transistor at high temperatures Materials Science Forum. 778: 1013-1016
Shao S, Lien WC, Maralani A, et al. (2014) Integrated 4H-silicon carbide diode bridge rectifier for high temperature (773 K) environment European Solid-State Device Research Conference. 138-141
Maralani A, Mazzola MS, Pisano AP. (2013) Vertical channel silicon carbide JFETs based operational amplifiers Materials Science Forum. 740: 1069-1072
Maralani A, Mazzola MS. (2012) The design of an operational amplifier using silicon carbide JFETs Ieee Transactions On Circuits and Systems I: Regular Papers. 59: 255-265
Maralani A, Mazzola MS, Sheridan D, et al. (2009) Characterization and modeling of SiC LTJFET for analog integrated circuit simulation and design Materials Science Forum. 615: 915-918
Maralani A, Mazzola MS. (2009) Design of a silicon carbide JFET based operational amplifier for gain and CMRR performance Proceedings - Ieee International Symposium On Circuits and Systems. 1953-1956
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