Ting-Chen Hu, Ph.D.

Affiliations: 
2006 University of California, Los Angeles, Los Angeles, CA 
Area:
Electronics and Electrical Engineering, Materials Science Engineering
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Mau-Chung Frank Chang grad student 2006 UCLA
 (Investigation on effects of ion-implantation on indium phosphide and gallium arsenic antimonide for high fmax double heterojunction bipolar transistor.)
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Publications

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Grillanda S, Raybon G, Adamiecki A, et al. (2020) 107 Gb/s Ultra-High Speed, Surface-Normal Electroabsorption Modulator Devices Journal of Lightwave Technology. 38: 804-810
Bulja S, Kopf R, Tate A, et al. (2019) Electro-chromic structure with a high degree of dielectric tunability. Scientific Reports. 9: 10773
Hu T, Chang MF, Weimann N, et al. (2005) Surface roughness in sulfur ion-implanted InP with molecular beam epitaxy regrown double-heterojunction bipolar transistor layers Applied Physics Letters. 86: 143508
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