Wiley P. Kirk

Affiliations: 
Materials Science & Engineering The University of Texas at Arlington 
Area:
Materials Science Engineering
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"Wiley Kirk"
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Kirk WP, Gandhi J, Kim CU. (2013) Improving photonic-electronic characteristics in quantum-dot solar cells via lattice strain mechanisms Proceedings of Spie - the International Society For Optical Engineering. 8620
Gandhi JS, Kim CU, Kirk WP. (2013) Island-cap interface misfit modulated carrier mechanisms in p-i-n epitaxial quantum dot photovoltaic devices Conference Record of the Ieee Photovoltaic Specialists Conference. 281-283
Kirk AP, Kirk WP. (2013) First principle analyses of direct bandgap solar cells with absorbing substrates versus mirrors Journal of Applied Physics. 114
Gandhi JS, Kim CU, Kirk WP. (2013) Misfit management for reduced dislocation formation in epitaxial quantum-dot-based devices Journal of Crystal Growth. 364: 169-177
Gandhi JS, Kim CU, Kirk WP. (2012) Enhanced Voc in InAs quantum-dot Based p-i-n solar cells using a non-alternating strain-balancing epitaxial growth method Conference Record of the Ieee Photovoltaic Specialists Conference. 789-793
Venugopal A, Chan J, Kirk WP, et al. (2011) The effect of field effect device channel dimensions on the effective mobility of graphene Device Research Conference - Conference Digest, Drc. 85-86
Venugopal A, Chan J, Li X, et al. (2011) Effective mobility of single-layer graphene transistors as a function of channel dimensions Journal of Applied Physics. 109
Sonnet AM, Galatage RV, Hurley PK, et al. (2011) On the calculation of effective electric field in In0.53 Ga 0.47 As surface channel metal-oxide-semiconductor field-effect-transistors Applied Physics Letters. 98
Veyan JF, Choi H, Huang M, et al. (2011) Si 2H 6 dissociative chemisorption and dissociation on Si(100)-(2×1) and Ge(100)-(2×1) Journal of Physical Chemistry C. 115: 24534-24548
Sonnet AM, Galatage RV, Hurley PK, et al. (2011) Remote phonon and surface roughness limited universal electron mobility of In0.53Ga0.47As surface channel MOSFETs Microelectronic Engineering. 88: 1083-1086
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