Carey M. Tanner, Ph.D.

Affiliations: 
2007 University of California, Los Angeles, Los Angeles, CA 
Area:
Chemical Engineering, Materials Science Engineering
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"Carey Tanner"

Parents

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Jane P. Chang grad student 2007 UCLA
 (Engineering high dielectric constant materials on silicon carbide.)
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Publications

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Lu KC, Wu WW, Wu HW, et al. (2007) In situ control of atomic-scale Si layer with huge strain in the nanoheterostructure NiSi/Si/NiSi through point contact reaction. Nano Letters. 7: 2389-94
Tanner CM, Toney MF, Lu J, et al. (2007) Engineering epitaxial γ -Al2 O3 gate dielectric films on 4H-SiC Journal of Applied Physics. 102
Tanner CM, Perng YC, Frewin C, et al. (2007) Electrical performance of Al2O3 gate dielectric films deposited by atomic layer deposition on 4H-SiC Applied Physics Letters. 91
Tanner CM, Sawkar-Mathur M, Lu J, et al. (2007) Structural properties of epitaxial γ- Al2O3 (111) thin films on 4H-SiC (0001) Applied Physics Letters. 90
Tanner CM, Choi J, Chang JP. (2007) Electronic structure and band alignment at the Hf O2 4H-SiC interface Journal of Applied Physics. 101
Tanner CM, Lu J, Blom HO, et al. (2006) Structural and Morphological Properties of Ultrathin HfO2 Dielectrics on 4H-SiC (0001) Materials Science Forum. 1075-1078
Tanner CM, Choi J, Chang JP. (2006) Experimental and first-principles studies of the band alignment at the HfO2/4H-SiC (0001) interface Materials Science Forum. 527: 1071-1074
Tanner CM, Lu J, Blom H, et al. (2006) Growth of Epitaxial γ-Al2O3 Dielectrics on 4H-SiC Mrs Proceedings. 911
Tanner CM, Lu J, Blom HO, et al. (2006) Growth of epitaxial γ-Al 2O 3 dielectrics on 4H-SiC Materials Research Society Symposium Proceedings. 911: 341-345
Tanner CM, Lu J, Blom HO, et al. (2006) Structural and morphological properties of ultrathin HfO2 dielectrics on 4H-SiC (0001) Materials Science Forum. 527: 1075-1078
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