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Julie L. Ngau, Ph.D.

Affiliations: 
2003 Stanford University, Palo Alto, CA 
Area:
Materials Science Engineering
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"Julie Ngau"
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James D. Plummer grad student 2003 Stanford
 (Process technology development for advanced silicon heterostructure devices.)

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Publications

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Ngau JL, Griffin PB, Plummer JD. (2002) Silicon orientation effects in the initial regime of wet oxidation Journal of the Electrochemical Society. 149
Ngau JL, Griffin PB, Plummer JD. (2001) A Comprehensive Model for Carbon Suppression of Boron Transient Enhanced Diffusion Mrs Proceedings. 669
Ngau JL, Griffin PB, Plummer JD. (2001) Modeling the suppression of boron transient enhanced diffusion in silicon by substitutional carbon incorporation Journal of Applied Physics. 90: 1768-1778
Ngau JL, Griffin PB, Plummer JD. (2001) A comprehensive model for carbon suppression of boron transient enhanced diffusion Materials Research Society Symposium - Proceedings. 669
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