Kailash Gopalakrishnan, Ph.D.

2004 Stanford University, Palo Alto, CA 
Electronics and Electrical Engineering
"Kailash Gopalakrishnan"


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James D. Plummer grad student 2004 Stanford
 (Impact -ionization MOS and its derivatives for logic and memory.)
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Gopalakrishnan K, Griffin PB, Plummer JD. (2005) Impact ionization MOS (I-MOS) - Part I : Device and circuit simulations Ieee Transactions On Electron Devices. 52: 69-76
Gopalakrishnan K, Griffin PB, Plummer JD. (2002) I-MOS: A novel semiconductor device with a subthreshold slope lower than kT/q Technical Digest - International Electron Devices Meeting. 289-292
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