Gyoungwon Park, Ph.D.
Affiliations: | 2001 | University of Texas at Austin, Austin, Texas, U.S.A. |
Area:
Electronics and Electrical Engineering, Optics PhysicsGoogle:
"Gyoungwon Park"Parents
Sign in to add mentor| Dennis G. Deppe | grad student | 2001 | UT Austin | |
| (Gallium arsenide-based long-wavelength quantum dot lasers.) | ||||
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Publications
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| Park GM, Kim YH, Yun SC, et al. (2016) Anatomical or Functional Evaluation as an Initial Test for Stable Coronary Artery Disease: A Propensity Score Analysis. Journal of Nuclear Medicine : Official Publication, Society of Nuclear Medicine |
| Deppe DG, Park G, Shchekin OB. (2000) Temperature dependence of quantum dot lasers Proceedings of Spie - the International Society For Optical Engineering. 4078: 90-99 |
| Shchekin OB, Park G, Huffaker DL, et al. (2000) Low-threshold continuous-wave two-stack quantum-dot laser with reduced temperature sensitivity Ieee Photonics Technology Letters. 12: 1120-1122 |
| Park G, Shchekin OB, Huffaker DL, et al. (2000) Low-threshold oxide-confined 1.3-μm quantum-dot laser Ieee Photonics Technology Letters. 12: 230-232 |
| Park G, Shchekin OB, Deppe DG. (2000) Temperature dependence of gain saturation in multilevel quantum dot lasers Ieee Journal of Quantum Electronics. 36: 1065-1071 |
| Shchekin OB, Park G, Huffaker DL, et al. (2000) Discrete energy level separation and the threshold temperature dependence of quantum dot lasers Applied Physics Letters. 77: 466-468 |
| Park G, Huffaker DL, Zou Z, et al. (1999) Temperature Dependence of Lasing Characteristics for Long-Wavelength (1.3-μm) GaAs-Based Quantum-Dot Lasers Ieee Photonics Technology Letters. 11: 301-303 |
| Deppe DG, Huffaker DL, Csutak S, et al. (1999) Spontaneous emission and threshold characteristics of 1.3-μm InGaAs-GaAs quantum-dot GaAs-based lasers Ieee Journal of Quantum Electronics. 35: 1238-1246 |
| Park G, Shchekin OB, Csutak S, et al. (1999) Room-temperature continuous-wave operation of a single-layered 1.3 μm quantum dot laser Applied Physics Letters. 75: 3267-3269 |
| Huffaker DL, Zou ZZ, Park G, et al. (1999) Effects of spontaneous emission rates on lasing characteristics of long-wavelength (1.3 µm) GaAs-based quantum dot lasers Journal of Electronic Materials. 28: 532-536 |