Swaroop Ganguly, Ph.D.
Affiliations: | 2005 | University of Texas at Austin, Austin, Texas, U.S.A. |
Area:
Electronics and Electrical EngineeringGoogle:
"Swaroop Ganguly"Parents
Sign in to add mentor| Sanjay K. Banerjee | grad student | 2005 | UT Austin | |
| (Ferromagnetic resonant tunneling diodes: Physics and applications.) | ||||
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Publications
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| Rawat A, Surana VK, Ganguly S, et al. (2020) Tensile strain and Fermi level alignment in thermally grown TiO2 and Al2O3 based AlGaN/GaN MOS-HEMTs Solid-State Electronics. 164: 107702 |
| Meer M, Rawat A, Takhar K, et al. (2020) Interface dynamics in ohmic contact optimization on AlGaN/GaN heterostructure by the formation of TiN Microelectronic Engineering. 219: 111144 |
| Pendem V, Udai A, Aggarwal T, et al. (2019) Theoretical modelling of exciton binding energy, steady-state and transient optical response of GaN/InGaN/GaN and AlGaN/GaN/AlGaN core-shell nanostructures. Nanotechnology |
| Chouksey S, Sreenadh S, Ganguly S, et al. (2019) Determination of size dependent carrier capture in InGaN/GaN quantum nanowires by femto-second transient absorption spectroscopy: effect of optical phonon, electron-electron scattering and diffusion. Nanotechnology |
| Rawat A, Surana VK, Meer M, et al. (2019) Gate Current Reduction and Improved DC/RF Characteristics in GaN-Based MOS-HEMTs Using Thermally Grown TiO 2 as a Dielectric Ieee Transactions On Electron Devices. 66: 2557-2562 |
| Sarkar R, Bhunia S, Nag D, et al. (2019) Epi-Gd2O3/AlGaN/GaN MOS HEMT on 150 mm Si wafer: A fully epitaxial system for high power application Applied Physics Letters. 115: 63502 |
| Ghosh J, Das S, Mukherjee S, et al. (2019) A study of electrical characteristics of Gd2O3/GaN and Gd2O3/AlGaN/GaN MOS Heterostructures Microelectronic Engineering. 216: 111097 |
| Takhar K, Upadhyay BB, Yadav YK, et al. (2019) Al2O3 formed by post plasma oxidation of Al as a Gate dielectric for AlGaN/GaN MIS-HEMTs Applied Surface Science. 481: 219-225 |
| Saha PK, Pendem V, Chouksey S, et al. (2018) Enhanced Luminescence from InGaN/GaN Nano-disk in a wire Array Caused by Surface Potential Modulation during Wet Treatment. Nanotechnology |
| Sankaranarayanan S, Chouksey S, Saha P, et al. (2018) Determination of strain relaxation in InGaN/GaN nanowalls from quantum confinement and exciton binding energy dependent photoluminescence peak. Scientific Reports. 8: 8404 |