Hailong Jiao
Affiliations: | 2012 | Electronic and Computer Engineering | Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong |
| 2012- | Eindhoven University of Technology, Eindhoven, Noord-Brabant, Netherlands |
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"Hailong Jiao"Parents
Sign in to add mentor| Volkan Kursun | grad student | 2012 | HKUST | |
| (Noise Mitigation in Low Leakage MTCMOS Circuits.) | ||||
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Publications
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| Lam H, Guo F, Qiu H, et al. (2020) Pseudo Multi-Port SRAM Circuit for Image Processing in Display Drivers Ieee Transactions On Circuits and Systems For Video Technology. 1-1 |
| Sun Y, He W, Mao Z, et al. (2020) Monolithic 3D Carbon Nanotube Memory for Enhanced Yield and Integration Density Ieee Transactions On Circuits and Systems. 67: 2431-2441 |
| Liang J, Yi S, Bai W, et al. (2020) A −80 dB PSRR 4.99 ppm/°C TC bandgap reference with nonlinear compensation Microelectronics Journal. 95: 104664 |
| Huo X, Liao C, Zhang M, et al. (2019) A Pixel Circuit With Wide Data Voltage Range for OLEDoS Microdisplays With High Uniformity Ieee Transactions On Electron Devices. 66: 4798-4804 |
| Sun Y, He W, Mao Z, et al. (2018) Metallic-CN-Removal-Tolerant High-Yield Six-CN-MOSFET SRAM Cell for Carbon-Based Embedded Memory Ieee Transactions On Electron Devices. 65: 1230-1238 |
| Lam H, Wang Y, Zhang M, et al. (2018) A Compact Pixel Circuit for Externally Compensated AMOLED Displays Ieee Journal of the Electron Devices Society. 6: 936-941 |
| Sun Y, He W, Mao Z, et al. (2017) High-Yield and Robust 9T SRAM Cell Tolerant to Removal of Metallic Carbon Nanotubes Ieee Transactions On Device and Materials Reliability. 17: 20-31 |
| Jiao H, Qiu Y, Kursun V. (2016) Variability-aware 7T SRAM circuit with low leakage high data stability SLEEP mode Integration, the Vlsi Journal. 53: 68-79 |
| Jiao H, Qiu Y, Kursun V. (2016) Low power and robust memory circuits with asymmetrical ground gating Microelectronics Journal. 48: 109-119 |
| Salahuddin SM, Kursun V, Jiao H. (2015) Finfet sram cells with asymmetrical bitline access transistors for enhanced read stability Transactions On Electrical and Electronic Materials. 16: 293-302 |