Stephen D. Hersee
Affiliations: | 1991- | Electrical Engineering | University of New Mexico, Albuquerque, NM, United States |
Area:
Electronics and Electrical Engineering, Optics Physics, NanotechnologyWebsite:
https://innovations.unm.edu/stephen-d-hersee-ph-d/Google:
"Stephen Hersee"Bio:
https://ieeexplore.ieee.org/author/37282326300
https://www.bu.edu/smartlighting/files/2010/01/Hersee_Bio.pdf
https://innovations.unm.edu/about/innovation-fellows/hersee/
https://scholar.google.com/citations?user=YwIRIukAAAAJ&hl=en
https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.458981
Children
Sign in to add trainee| Gregory M. Peake | grad student | 2000 | Univ. of New Mexico (Physics Tree) |
| David Zubia | grad student | 2000 | Univ. of New Mexico |
| Mohammad S. Ferdous | grad student | 2008 | Univ. of New Mexico |
| Ashwin K. Rishinaramangalam | grad student | 2012 | Univ. of New Mexico |
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Publications
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| Rishinaramangalam AK, Fairchild MN, Hersee SD, et al. (2013) Three-dimensional GaN templates for molecular beam epitaxy of nonpolar InGaN/GaN coaxial light-emitting diodes Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 31 |
| Hersee SD, Rishinaramangalam AK, Fairchild MN, et al. (2011) Threading defect elimination in GaN nanowires Journal of Materials Research. 26: 2293-2298 |
| Talin AA, Léonard F, Katzenmeyer AM, et al. (2010) Transport characterization in nanowires using an electrical nanoprobe Semiconductor Science and Technology. 25 |
| Arslan I, Hyun JK, Erni R, et al. (2009) Using electrons as a high-resolution probe of optical modes in individual nanowires. Nano Letters. 9: 4073-7 |
| Léonard F, Talin AA, Katzenmeyer A, et al. (2009) Electronic transport in nanowires: From injection-limited to spacecharge- limited behavior Proceedings of Spie - the International Society For Optical Engineering. 7406 |
| Talin AA, Swartzentruber BS, Ĺonard F, et al. (2009) Electrical transport in GaN nanowires grown by selective epitaxy Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 27: 2040-2043 |
| Hersee SD, Fairchild M, Rishinaramangalam AK, et al. (2009) GaN nanowire light emitting diodes based on templated and scalable nanowire growth process Electronics Letters. 45: 75-76 |
| Ferdous MS, Wang X, Fairchild MN, et al. (2007) Effect of threading defects on InGaNGaN multiple quantum well light emitting diodes Applied Physics Letters. 91 |
| Li Q, Krauss JL, Hersee S, et al. (2007) Probing interactions of ge with chemical and thermal SiO |
| Hersee SD, Sun X, Wang X. (2006) The controlled growth of GaN nanowires. Nano Letters. 6: 1808-11 |