Zlatko Sitar
Affiliations: | Materials Science and Engineering | North Carolina State University, Raleigh, NC |
Area:
Materials Science EngineeringWebsite:
https://www.mse.ncsu.edu/alumni/halloffame/zlatko-sitar/#:~:text=Dr.,GaN%2C%20AlN%2C%20and%20diamond.Google:
"Zlatko Sitar"Bio:
https://www.proquest.com/openview/75a7aa0d0677beb81cddcc94d506e164/1
Parents
Sign in to add mentor| Robert Foster Davis | grad student | 1990 | NCSU | |
| (Growth and characterization of III-V nitride thin films) | ||||
Children
Sign in to add trainee| Hyunmin Shin | grad student | 2001 | NCSU |
| Ramon R. Collazo | grad student | 2002 | NCSU |
| Gleb N. Yushin | grad student | 1999-2003 | NCSU |
| Nirmal Govindaraju | grad student | 2004 | NCSU |
| Elif Berkman | grad student | 2005 | NCSU |
| Rafael F. Dalmau | grad student | 2005 | NCSU |
| William J. Mecouch | grad student | 2005 | NCSU |
| Seiji Mita | grad student | 2007 | NCSU |
| Xianglin LI | grad student | 2008 | NCSU |
| Lindsay K. Hussey | grad student | 2014 | NCSU |
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Publications
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| Gacevic Z, Grandal J, Guo Q, et al. (2021) Structural and optical properties of self-assembled AlN nanowires grown on SiO2/Si substrates by molecular beam epitaxy. Nanotechnology |
| Guo Q, Kirste R, Reddy P, et al. (2020) Impact of the effective refractive index in AlGaN-based mid-UV laser structures on waveguiding Japanese Journal of Applied Physics. 59: 91001 |
| Reddy P, Khachariya D, Szymanski D, et al. (2020) Role of polarity in SiN on Al/GaN and the pathway to stable contacts Semiconductor Science and Technology. 35: 55007 |
| Amano H, Collazo R, Santi Cd, et al. (2020) The 2020 UV Emitter Roadmap Journal of Physics D |
| Bagheri P, Reddy P, Kim JH, et al. (2020) Impact of impurity-based phonon resonant scattering on thermal conductivity of single crystalline GaN Applied Physics Letters. 117: 82101 |
| Khachariya D, Szymanski D, Sengupta R, et al. (2020) Chemical treatment effects on Schottky contacts to metalorganic chemical vapor deposited n-type N-polar GaN Journal of Applied Physics. 128: 64501 |
| Baker JN, Bowes PC, Harris JS, et al. (2020) Complexes and compensation in degenerately donor doped GaN Applied Physics Letters. 117: 102109 |
| Vetter E, Biliroglu M, Seyitliyev D, et al. (2020) Observation of carrier concentration dependent spintronic terahertz emission from n-GaN/NiFe heterostructures Applied Physics Letters. 117: 93502 |
| Bagheri P, Kirste R, Reddy P, et al. (2020) The nature of the DX state in Ge-doped AlGaN Applied Physics Letters. 116: 222102 |
| Washiyama S, Guan Y, Mita S, et al. (2020) Recovery kinetics in high temperature annealed AlN heteroepitaxial films Journal of Applied Physics. 127: 115301 |