Krishna C. Mandal
Affiliations: | Electrical Engineering | University of South Carolina, Columbia, SC |
Area:
Electronics and Electrical Engineering, Materials Science EngineeringGoogle:
"Krishna Mandal"
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Publications
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| Mandal KC, Chaudhuri SK, Nag R. (2023) High Performance Pd/4H-SiC Epitaxial Schottky Barrier Radiation Detectors for Harsh Environment Applications. Micromachines. 14 |
| Mandal KC, Kleppinger JW, Chaudhuri SK. (2020) Advances in High-Resolution Radiation Detection Using 4H-SiC Epitaxial Layer Devices. Micromachines. 11 |
| Sajjad M, Chaudhuri SK, Kleppinger JW, et al. (2020) Growth of Large-Area Cd₀.₉Zn₀.₁Te Single Crystals and Fabrication of Pixelated Guard-Ring Detector for Room-Temperature γ-Ray Detection Ieee Transactions On Nuclear Science. 67: 1946-1951 |
| Chaudhuri SK, Sajjad M, Kleppinger JW, et al. (2020) Correlation of Space Charge Limited Current and γ-Ray Response of Cd x Zn 1-x Te 1-y Se y Room-Temperature Radiation Detectors Ieee Electron Device Letters. 41: 1336-1339 |
| Chaudhuri SK, Kleppinger JW, Mandal KC. (2020) Radiation detection using fully depleted 50 μm thick Ni/n-4H-SiC epitaxial layer Schottky diodes with ultra-low concentration of Z 1 / 2 and E H 6 / 7 deep defects Journal of Applied Physics. 128: 114501 |
| Chaudhuri SK, Sajjad M, Kleppinger JW, et al. (2020) Charge transport properties in CdZnTeSe semiconductor room-temperature γ-ray detectors Journal of Applied Physics. 127: 245706 |
| Chaudhuri SK, Sajjad M, Mandal KC. (2020) Pulse-shape analysis in Cd0.9Zn0.1Te0.98Se0.02 room-temperature radiation detectors Applied Physics Letters. 116: 162107 |
| Das AC, Bhattacharya S, Jewariya M, et al. (2017) Identification of Combination Phonon Modes in Pure and Doped GaSe Crystals by THz Spectroscopy Ieee Journal of Selected Topics in Quantum Electronics. 23: 1-7 |
| Samanta P, Mandal KC. (2017) Leakage current conduction, hole injection, and time-dependent dielectric breakdown ofn-4H-SiC MOS capacitors during positive bias temperature stress Journal of Applied Physics. 121: 034501 |
| Nguyen KV, Mandal KC. (2016) Ru-induced deep levels in Ru/4H-SiC epilayer Schottky diodes by deep level transient spectroscopy Ecs Journal of Solid State Science and Technology. 5: P3078-P3081 |