Jinggang Lu, Ph.D.
Affiliations: | 2004 | North Carolina State University, Raleigh, NC |
Area:
Materials Science EngineeringGoogle:
"Jinggang Lu"Parents
Sign in to add mentorGeorge A. Rozgonyi | grad student | 2004 | NCSU | |
(Light element impurities and related defects in polycrystalline silicon for photovoltaic application.) |
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Publications
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Yuan S, Yu X, Gu X, et al. (2016) Aluminum-doped crystalline silicon and its photovoltaic application Superlattices and Microstructures. 99: 158-164 |
Park Y, Lu J, Park J, et al. (2015) The Influence of Hydrogenation on the Electrical Properties of Impurity-Contaminated Silicon Grain Boundaries Electronic Materials Letters. 11: 993-997 |
Park Y, Lu J, Park JH, et al. (2015) Impact of structural defect density on gettering of transition metal impurities during phosphorus emitter diffusion in multi-crystalline silicon solar cell processing Electronic Materials Letters. 11: 658-663 |
Chen L, Yu X, Chen P, et al. (2011) Effect of oxygen precipitation on the performance of Czochralski silicon solar cells Solar Energy Materials and Solar Cells. 95: 3148-3151 |
Park Y, Lu J, Rozgonyi G. (2010) Segregation and thermal dissociation of hydrogen at the (110)/(001) silicon grain boundary Electronic Materials Letters. 6: 1-5 |
Lu J, Yu X, Park Y, et al. (2009) Investigation of iron impurity gettering at dislocations in a SiGe/Si heterostructure Journal of Applied Physics. 105: 73712 |
Park Y, Lu J, Rozgonyi G. (2009) Hydrogen passivation of deep energy levels at the interfacial grain boundary in (110)/(100) bonded silicon wafers Journal of Applied Physics. 105: 14912 |
Yu X, Lu J, Rozgonyi G. (2008) Deep-level transient spectroscopy study on direct silicon bonded (1 1 0)/(1 0 0) interfacial grain boundary Semiconductor Science and Technology. 23: 125005 |
Yu X, Lu J, Rozgonyi G. (2008) Impact of Cu contamination on the electrical properties of a direct silicon bonded (110)/(100) interfacial grain boundary Journal of Applied Physics. 104: 113702 |
Lu J, Rozgonyi G, Seacrist M, et al. (2008) Effect of strained-Si layer thickness on dislocation distribution and SiGe relaxation in strained-Si/SiGe heterostructures Journal of Applied Physics. 104: 074904 |