Nathan G. Stoddard, Ph.D.
Affiliations: | 2004 | North Carolina State University, Raleigh, NC |
Area:
Materials Science EngineeringGoogle:
"Nathan Stoddard"Parents
Sign in to add mentor| George A. Rozgonyi | grad student | 2004 | NCSU | |
| (On the interactions of point defects, dopants and light element impurities in silicon as stimulated by 200 kV electron irradiation.) | ||||
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Publications
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| Stoddard N, Pichler P, Duscher G, et al. (2005) Ab initio identification of the nitrogen diffusion mechanism in silicon. Physical Review Letters. 95: 025901 |
| Stoddard N, Duscher G, Karoui A, et al. (2005) Segregation and enhanced diffusion of nitrogen in silicon induced by low energy ion bombardment Journal of Applied Physics. 97 |
| Stoddard N, Duscher GJM, Windl W, et al. (2005) A new understanding of near-threshold damage for 200 keV irradiation in silicon Journal of Materials Science. 40: 3639-3650 |
| Stoddard NG, Duscher G, Windl W, et al. (2004) Simulation and Electron Energy-Loss Spectroscopy of Electron Beam Induced Point Defect Agglomerations in Silicon Mrs Proceedings. 810 |
| Stoddard NG, Duscher G, Windl W, et al. (2004) Simulation and electron energy-loss spectroscopy of electron beam induced point defect agglomerations in silicon Materials Research Society Symposium - Proceedings. 810: 115-120 |
| Stoddard N, Karoui A, Duscher G, et al. (2003) In Situ Point Defect Generation and Agglomeration during Electron-Beam Irradiation of Nitrogen-Doped Czochralski Silicon Electrochemical and Solid-State Letters. 6 |