Janet R. Pedrazzani, Ph.D.

Affiliations: 
2010 University of Rochester, Rochester, NY 
Area:
Optics Physics, Solid State Physics
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"Janet Pedrazzani"

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Gary W. Wicks grad student 2010 Rochester
 (Characteristics of an Indium Asenide-based nBn photodetectors grown by molecular beam epitaxy.)
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Publications

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Jain M, Pedrazzani JR, Golding TG, et al. (2013) NBn dark current reduction by UV hydrogenation Infrared Physics and Technology. 59: 156-157
Savich GR, Pedrazzani JR, Sidor DE, et al. (2013) Benefits and limitations of unipolar barriers in infrared photodetectors Infrared Physics and Technology. 59: 152-155
Savich GR, Pedrazzani JR, Maimon S, et al. (2011) Application of epitaxial unipolar barriers to reduce noise currents in photodetectors International Journal of High Speed Electronics and Systems. 20: 557-564
Savich GR, Pedrazzani JR, Sidor DE, et al. (2011) Use of unipolar barriers to block dark currents in infrared detectors Proceedings of Spie - the International Society For Optical Engineering. 8012
Savich GR, Pedrazzani JR, Sidor DE, et al. (2011) Dark current filtering in unipolar barrier infrared detectors Applied Physics Letters. 99
Wicks GW, Savich GR, Pedrazzani JR, et al. (2010) Infrared detector epitaxial designs for suppression of surface leakage current Proceedings of Spie - the International Society For Optical Engineering. 7608
Savich GR, Pedrazzani JR, Maimon S, et al. (2010) Suppression of surface leakage currents using molecular beam epitaxy-grown unipolar barriers Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 28
Savich GR, Pedrazzani JR, Maimon S, et al. (2010) Use of epitaxial unipolar barriers to block surface leakage currents in photodetectors Physica Status Solidi (C) Current Topics in Solid State Physics. 7: 2540-2543
Pedrazzani JR, Maimon S, Wicks GW. (2008) Use of nBn structures to suppress surface leakage currents in unpassivated InAs infrared photodetectors Electronics Letters. 44: 1487-1488
Wicks GW, Koch MW, Pedrazzani JR. (2005) Studies of ammonia dissociation during the gas source molecular-beam epitaxial growth of III nitrides Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 23: 1186-1189
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