Marco Bellini, Ph.D.
Affiliations: | 2009 | Georgia Institute of Technology, Atlanta, GA |
Area:
Electronics and Electrical EngineeringGoogle:
"Marco Bellini"Parents
Sign in to add mentor| John D. Cressler | grad student | 2009 | Georgia Tech | |
| (Operation of silicon -germanium heterojunction bipolar transistors on silicon -on -insulator in extreme environments.) | ||||
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Publications
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| Najafizadeh L, Phillips SD, Moen KA, et al. (2009) Single event transient response of sige voltage references and its impact on the performance of analog and mixed-signal circuits Ieee Transactions On Nuclear Science. 56: 3469-3476 |
| Bellini M, Phillips SD, Diestelhorst RM, et al. (2008) Novel Total Dose and Heavy-Ion Charge Collection Phenomena in a New SiGe HBT on >Thin-Film SOI Technology Ieee Transactions On Nuclear Science. 55: 3197-3201 |
| Najafizadeh L, Sutton AK, Diestelhorst RM, et al. (2007) A comparison of the effects of X-ray and proton irradiation on the performance of SiGe precision voltage references Ieee Transactions On Nuclear Science. 54: 2238-2244 |
| Bellini M, Jun B, Sutton AK, et al. (2007) The effects of proton and X-ray irradiation on the DC and AC performance of complementary (npn + pnp) SiGe HBTs on thick-film SOI Ieee Transactions On Nuclear Science. 54: 2245-2250 |
| Sutton AK, Bellini M, Cressler JD, et al. (2007) An Evaluation of Transistor-Layout RHBD Techniques for SEE Mitigation in SiGe HBTs Ieee Transactions On Nuclear Science. 54: 2044-2052 |
| Appaswamy A, Bellini M, Kuo WML, et al. (2007) Impact of scaling on the inverse-mode operation of SiGe HBTs Ieee Transactions On Electron Devices. 54: 1492-1501 |
| Bellini M, Cressler JD, Cai J. (2007) Assessing the high-temperature capabilities of SiGe HBTs fabricated on CMOS-compatible thin-film SOI Proceedings of the Ieee Bipolar/Bicmos Circuits and Technology Meeting. 234-237 |
| Jun B, Diestelhorst RM, Bellini M, et al. (2006) Temperature-dependence of off-state drain leakage in X-ray irradiated 130 nm CMOS devices Ieee Transactions On Nuclear Science. 53: 3203-3209 |
| Bellini M, Jun B, Chen T, et al. (2006) X-Ray Irradiation and Bias Effects in Fully-Depleted and Partially-Depleted SiGe HBTs Fabricated on CMOS-Compatible SOI Ieee Transactions On Nuclear Science. 53: 3182-3186 |
| Sutton AK, Prakash APG, Jun B, et al. (2006) An Investigation of Dose Rate and Source Dependent Effects in 200 GHz SiGe HBTs Ieee Transactions On Nuclear Science. 53: 3166-3174 |