Jiahui Yuan, Ph.D.
Affiliations: | 2010 | Georgia Institute of Technology, Atlanta, GA |
Area:
Electronics and Electrical EngineeringGoogle:
"Jiahui Yuan"Parents
Sign in to add mentor| John D. Cressler | grad student | 2010 | Georgia Tech | |
| (Cryogenic operation of silicon -germanium heterojunction bipolar transistors and its relation to scaling and optimization.) | ||||
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Publications
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| Yuan J, Cressler JD. (2011) Design and optimization of superjunction collectors for use in high-speed SiGe HBTs Ieee Transactions On Electron Devices. 58: 1655-1662 |
| Yuan J, Moen KA, Cressler JD, et al. (2010) SiGe HBT CML ring oscillator with 2.3-ps gate delay at cryogenic temperatures Ieee Transactions On Electron Devices. 57: 1183-1187 |
| Yuan J, Cressler JD, Krithivasan R, et al. (2009) On the performance limits of cryogenically operated SiGe HBTs and its relation to scaling for terahertz speeds Ieee Transactions On Electron Devices. 56: 1007-1019 |
| Thrivikraman TK, Yuan J, Bardin JC, et al. (2008) SiGe HBT X-band LNAs for ultra-low-noise cryogenic receivers Ieee Microwave and Wireless Components Letters. 18: 476-478 |
| Appaswamy A, Bellini M, Kuo WML, et al. (2007) Impact of scaling on the inverse-mode operation of SiGe HBTs Ieee Transactions On Electron Devices. 54: 1492-1501 |
| Yuan J, Cressler JD, Zhu C, et al. (2007) An investigation of negative differential resistance and novel collector-current kink effects in SiGe HBTs operating at cryogenic temperatures Ieee Transactions On Electron Devices. 54: 504-516 |
| Yuan JS. (1996) Study of AlGaAs/InGaAs pseudomorphic HEMT using a two-dimensional device simulator Physica Status Solidi (a) Applied Research. 153: 559-566 |
| Yuan JS. (1994) Low-temperature BiCMOS gate pull-down delay analysis International Journal of Electronics. 76: 221-232 |
| Yuan JS. (1994) Base current reversal in bipolar transistors and circuits: a review and update Iee Proceedings: Circuits, Devices and Systems. 141: 299-306 |
| Yuan JS. (1993) Avalanche breakdown effects on AIGaAs/GaAs HBT performance International Journal of Electronics. 74: 909-916 |