Kurt A. Moen, Ph.D.

Affiliations: 
2012 Georgia Institute of Technology, Atlanta, GA 
Area:
Electronics and Electrical Engineering
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"Kurt Moen"

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John D. Cressler grad student 2012 Georgia Tech
 (Predictive modeling of device and circuit reliability in highly scaled CMOS and silicon germanium BiCMOS technology.)
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Publications

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Chakraborty PS, Moen KA, Cressler JD. (2013) An investigation on the optimization and scaling of complementary SiGe HBTs Ieee Transactions On Electron Devices. 60: 34-41
Phillips SD, Moen KA, Lourenco NE, et al. (2012) Single-event response of the SiGe HBT operating in inverse-mode Ieee Transactions On Nuclear Science. 59: 2682-2690
Moen KA, Chakraborty PS, Raghunathan US, et al. (2012) Predictive physics-based TCAD modeling of the mixed-mode degradation mechanism in SiGe HBTs Ieee Transactions On Electron Devices. 59: 2895-2901
Moen KA, Najafizadeh L, Seungwoo J, et al. (2011) Accurate modeling of single-event transients in a SiGe voltage reference circuit Ieee Transactions On Nuclear Science. 58: 877-884
Moen KA, Phillips SD, Cressler JD. (2011) Establishing best-practice modeling approaches for understanding single-event transients in Gb/s SiGe digital logic Proceedings of the European Conference On Radiation and Its Effects On Components and Systems, Radecs. 371-375
Chakraborty PS, Moen KA, Cressler JD. (2011) Predictive TCAD modeling of the scaling-induced, reverse-biased, emitter-base tunneling current in SiGe HBTs Proceedings of the Ieee Bipolar/Bicmos Circuits and Technology Meeting. 13-16
Thomas DB, Najafizadeh L, Cressler JD, et al. (2011) Optimization of SiGe bandgap-based circuits for up to 300 °c operation Solid-State Electronics. 56: 47-55
Phillips SD, Moen KA, Najafizadeh L, et al. (2010) A comprehensive understanding of the efficacy of N-ring SEE hardening methodologies in SiGe HBTs Ieee Transactions On Nuclear Science. 57: 3400-3406
Yuan J, Moen KA, Cressler JD, et al. (2010) SiGe HBT CML ring oscillator with 2.3-ps gate delay at cryogenic temperatures Ieee Transactions On Electron Devices. 57: 1183-1187
Moen KA, Cressler JD. (2010) Measurement and modeling of carrier transport parameters applicable to SiGe BiCMOS technology operating in extreme environments Ieee Transactions On Electron Devices. 57: 511-561
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