Sachin Seth, Ph.D.

Affiliations: 
2012 Electrical and Computer Engineering Georgia Institute of Technology, Atlanta, GA 
Area:
Electronics and Electrical Engineering, Computer Engineering
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John D. Cressler grad student 2012 Georgia Tech
 (Using complementary silicon-germanium transistors for design of high-performance RF front-ends.)
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Publications

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Seth S, Song P, Cressler JD, et al. (2012) On the RF Power-Handling Capabilities of Forward- and Inverse-Mode SiGe HBT RF Switches Fabricated on Thick-Film SOI Ieee Transactions On Electron Devices. 59: 2531-2533
Arora R, Zhang EX, Seth S, et al. (2011) Trade-Offs Between RF Performance and Total-Dose Tolerance in 45-nm RF-CMOS Ieee Transactions On Nuclear Science. 58: 2830-2837
Cheng P, Seth S, Cressler JD, et al. (2011) An Investigation of DC and RF Safe Operating Area of n-p-n $+$ p-n-p SiGe HBTs on SOI Ieee Transactions On Electron Devices. 58: 2573-2581
Seth S, Najafizadeh L, Cressler JD. (2011) On the RF properties of weakly saturated SiGe HBTs and their potential use in ultralow-voltage circuits Ieee Electron Device Letters. 32: 3-5
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