Alan D. Tipton, Ph.D.
Affiliations: | 2008 | Vanderbilt University, Nashville, TN |
Area:
Electronics and Electrical EngineeringGoogle:
"Alan Tipton"Parents
Sign in to add mentor| Ronald D. Schrimpf | grad student | 2008 | Vanderbilt | |
| (On the impact of device orientation on the multiple cell upset radiation response in nanoscale integrated circuits.) | ||||
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Publications
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| Sierawski BD, Pellish JA, Reed RA, et al. (2009) Impact of low-energy proton induced upsets on test methods and rate predictions Ieee Transactions On Nuclear Science. 56: 3085-3092 |
| Hutson JM, Pellish JA, Tipton AD, et al. (2009) Evidence for lateral angle effect on single-event latchup in 65nm SRAMs Ieee Transactions On Nuclear Science. 56: 208-213 |
| Black JD, Ball DR, Robinson WH, et al. (2008) Characterizing SRAM single event upset in terms of single and multiple node charge collection Ieee Transactions On Nuclear Science. 55: 2943-2947 |
| Tipton AD, Pellish JA, Hutson JM, et al. (2008) Device-orientation effects on multiple-bit upset in 65 nm SRAMs Ieee Transactions On Nuclear Science. 55: 2880-2885 |
| Tipton AD, Zhu X, Weng H, et al. (2008) Increased rate of multiple-bit upset from neutrons at large angles of incidence Ieee Transactions On Device and Materials Reliability. 8: 565-569 |
| Reed RA, Vizkelethy G, Pellish JA, et al. (2007) Applications of heavy ion microprobe for single event effects analysis Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions With Materials and Atoms. 261: 443-446 |
| Reed RA, Vizkelethy G, Pellish JA, et al. (2007) WITHDRAWN: Applications of Heavy Ion Microprobe for Single Event Effects Analysis Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms |
| Tipton AD, Pellish JA, Reed RA, et al. (2006) Multiple-bit upset in 130 nm CMOS technology Ieee Transactions On Nuclear Science. 53: 3259-3264 |