Matthew J. Gadlage, Ph.D.

Affiliations: 
2010 Vanderbilt University, Nashville, TN 
Area:
Electronics and Electrical Engineering
Google:
"Matthew Gadlage"

Parents

Sign in to add mentor
Ronald D. Schrimpf grad student 2010 Vanderbilt
 (Impact of temperature on single-event transients in deep submicrometer bulk and silicon-on-insulator digital CMOS technologies.)
BETA: Related publications

Publications

You can help our author matching system! If you notice any publications incorrectly attributed to this author, please sign in and mark matches as correct or incorrect.

Gadlage MJ, Bruce DI, Ingalls JD, et al. (2019) Directional Dependence of Co-60 Irradiation on the Total Dose Response of Flash Memories Ieee Transactions On Nuclear Science. 66: 148-154
Gadlage MJ, Roach AH, Duncan AR, et al. (2018) Multiple-Cell Upsets Induced by Single High-Energy Electrons Ieee Transactions On Nuclear Science. 65: 211-216
Gadlage MJ, Ahlbin JR, Gadfort P, et al. (2017) Characterization of Single-Event Transients in Schmitt Trigger Inverter Chains Operating at Subthreshold Voltages Ieee Transactions On Nuclear Science. 64: 637-642
Gadlage MJ, Roach AH, Duncan AR, et al. (2017) Soft Errors Induced by High-Energy Electrons Ieee Transactions On Device and Materials Reliability. 17: 157-162
Duncan AR, Gadlage MJ, Roach AH, et al. (2016) Characterizing Radiation and Stress-Induced Degradation in an Embedded Split-Gate NOR Flash Memory Ieee Transactions On Nuclear Science. 63: 1276-1283
Gadlage MJ, Roach AH, Duncan AR, et al. (2015) Electron-Induced Single-Event Upsets in 45-nm and 28-nm Bulk CMOS SRAM-Based FPGAs Operating at Nominal Voltage Ieee Transactions On Nuclear Science. 62: 2717-2724
Kay MJ, Gadlage MJ, Duncan AR, et al. (2013) Using charge accumulation to improve the radiation tolerance of multi-Gb nand flash memories Ieee Transactions On Nuclear Science. 60: 4214-4219
Ingalls JD, Gadlage MJ, Duncan AR, et al. (2013) Implications of the logical decode on the radiation response of a multi-level cell NAND flash memory Ieee Transactions On Nuclear Science. 60: 4451-4456
Gadlage MJ, Kay MJ, Ingalls JD, et al. (2013) Impact of X-ray exposure on a triple-level-cell NAND flash Ieee Transactions On Nuclear Science. 60: 4533-4539
Gadlage MJ, Kay MJ, Duncan AR, et al. (2012) Impact of neutron-induced displacement damage on the multiple bit upset sensitivity of a bulk CMOS SRAM Ieee Transactions On Nuclear Science. 59: 2722-2728
See more...