Ashwin K. Rishinaramangalam, Ph.D.
Affiliations: | 2012 | Electrical Engineering | University of New Mexico, Albuquerque, NM, United States |
Area:
Electronics and Electrical Engineering, Optics Physics, NanotechnologyGoogle:
"Ashwin Rishinaramangalam"Parents
Sign in to add mentor| Stephen D. Hersee | grad student | 2012 | Univ. of New Mexico | |
| (Growth, processing and characterization of gallium nitride based coaxial leds grown by MOVPE.) | ||||
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Publications
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| Behzadirad M, Rishinaramangalam AK, Feezell D, et al. (2020) Field emission scanning probe lithography with GaN nanowires on active cantilevers Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 38: 32806 |
| Rashidi A, Rishinaramangalam AK, Aragon AA, et al. (2020) High-Speed Nonpolar InGaN/GaN Superluminescent Diode With 2.5 GHz Modulation Bandwidth Ieee Photonics Technology Letters. 32: 383-386 |
| Tarief Elshafiey A, DaVico KM, Rishinaramangalam AK, et al. (2020) GaN/InGaN Blue Light‐Emitting Diodes on Polycrystalline Molybdenum Metal Foils by Ion Beam‐Assisted Deposition Physica Status Solidi (a). 217: 1900800 |
| Nami M, Rashidi A, Monavarian M, et al. (2019) Electrically Injected GHz-Class GaN/InGaN Core–ShellNanowire-Based μLEDs: Carrier Dynamics and Nanoscale Homogeneity Acs Photonics. 6: 1618-1625 |
| Okur S, Rishinaramangalam AK, Mishkat Ul Masabih S, et al. (2018) Spectrally-Resolved Internal Quantum Efficiency and Carrier Dynamics of Semipolar (101 ̅1) Core-Shell Triangular Nanostripe GaN/InGaN LEDs. Nanotechnology |
| Nami M, Stricklin IE, DaVico KM, et al. (2018) Carrier Dynamics and Electro-Optical Characterization of High-Performance GaN/InGaN Core-Shell Nanowire Light-Emitting Diodes. Scientific Reports. 8: 501 |
| Lenk C, Lenk S, Holz M, et al. (2018) Experimental study of field emission from ultrasharp silicon, diamond, GaN, and tungsten tips in close proximity to the counter electrode Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 36 |
| Lenk C, Hofmann M, Ivanov T, et al. (2018) Sharp GaN nanowires used as field emitter on active cantilevers for scanning probe lithography Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 36 |
| Rashidi A, Monavarian M, Aragon A, et al. (2018) Nonpolar ${m}$ -Plane InGaN/GaN Micro-Scale Light-Emitting Diode With 1.5 GHz Modulation Bandwidth Ieee Electron Device Letters. 39: 520-523 |
| Monavarian M, Rashidi A, Aragon AA, et al. (2018) Impact of crystal orientation on the modulation bandwidth of InGaN/GaN light-emitting diodes Applied Physics Letters. 112: 41104 |