Xiaomu Wang, Ph.D.

2012 Electronic Engineering The Chinese University of Hong Kong, Hong Kong, Hong Kong 
Electronics and Electrical Engineering, Materials Science Engineering
"Xiaomu Wang"


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Jian-Bin Xu grad student 2012 Chinese University of Hong Kong
 (Graphene Interface Engineering: Surface/Substrate Modifications cum Metal Contact Exploration.)
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Gao A, Zhang Z, Li L, et al. (2019) Robust Impact-Ionization Field-Effect Transistor Based on Nanoscale Vertical Graphene/Black Phosphorus/Indium Selenide Heterostructures. Acs Nano
Li L, Liu W, Gao A, et al. (2019) Plasmon Excited Ultrahot Carriers and Negative Differential Photoresponse in a Vertical Graphene van der Waals Heterostructure. Nano Letters
He R, Chen Z, Lai H, et al. (2019) Van der Waals transition metal oxide for vis-MIR broadband photodetection via intercalation strategy. Acs Applied Materials & Interfaces
Yu L, Zhu Z, Gao A, et al. (2018) Electrically tunable optical properties of few layers black arsenic phosphorus. Nanotechnology
Jiang J, Ling C, Xu T, et al. (2018) Defect Engineering for Modulating the Trap States in 2D Photoconductors. Advanced Materials (Deerfield Beach, Fla.). e1804332
Long M, Gao A, Wang P, et al. (2017) Room temperature high-detectivity mid-infrared photodetectors based on black arsenic phosphorus. Science Advances. 3: e1700589
Wu B, Zhao Y, Nan H, et al. (2016) Precise, self-limited epitaxy of ultrathin organic semiconductors and heterojunctions tailored by van der Waals interactions. Nano Letters
Liu X, Luo X, Nan H, et al. (2016) Epitaxial Ultrathin Organic Crystals on Graphene for High-Efficiency Phototransistors. Advanced Materials (Deerfield Beach, Fla.)
Zhang Y, Qiao J, Gao S, et al. (2016) Probing Carrier Transport and Structure-Property Relationship of Highly Ordered Organic Semiconductors at the Two-Dimensional Limit. Physical Review Letters. 116: 016602
He D, Zhang Y, Wu Q, et al. (2014) Two-dimensional quasi-freestanding molecular crystals for high-performance organic field-effect transistors. Nature Communications. 5: 5162
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