Kunigunde H. Cherenack, Ph.D.

Affiliations: 
2009 Princeton University, Princeton, NJ 
Area:
Electronics and Electrical Engineering
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"Kunigunde Cherenack"

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Sigurd Wagner grad student 2009 Princeton
 (Fabricating silicon thin -film transistors on plastic at 300°C.)
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Publications

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Cherenack KH, Hekmatshoar B, Sturm JC, et al. (2010) Self-aligned amorphous silicon thin-film transistors fabricated on clear plastic at 300°C Ieee Transactions On Electron Devices. 57: 2381-2389
Wagner S, Han L, Hekmatshoar B, et al. (2010) 61.3: Amorphous silicon TFT technology for rollable OLED displays 48th Annual Sid Symposium, Seminar, and Exhibition 2010, Display Week 2010. 2: 917-920
Wagner S, Han L, Hekmatshoar B, et al. (2010) 61.3: Amorphous silicon TFT technology for rollable OLED displays 48th Annual Sid Symposium, Seminar, and Exhibition 2010, Display Week 2010. 2: 917-920
Han L, Mandlik P, Cherenack KH, et al. (2009) Amorphous silicon thin-film transistors with field-effect mobilities of 2 cm2 /V s for electrons and 0.1 cm2 /V s for holes Applied Physics Letters. 94
Cherenack KH, Kattamis AZ, Hekmatshoar B, et al. (2009) Amorphous silicon thin-film transistors made on clear plastic at 300°C Journal of the Korean Physical Society. 54: 415-420
Hekmatshoar B, Cherenack KH, Wagner S, et al. (2008) Amorphous silicon thin-film transistors with DC saturation current half-life of more than 100 years Technical Digest - International Electron Devices Meeting, Iedm
Hekmatshoar B, Cherenack KH, Kattamis AZ, et al. (2008) Highly stable amorphous-silicon thin-film transistors on clear plastic Applied Physics Letters. 93
Cherenack KH, Kattamis AZ, Hekmatshoar B, et al. (2008) Self-aligned amorphous silicon thin film transistors with mobility above 1 cm 2V -1s -1 fabricated at 300° C on clear plastic substrates Materials Research Society Symposium Proceedings. 1066: 471-476
Kattamis AZ, Cherenack KH, Cheng IC, et al. (2008) Fracture mechanisms of sink thin-films on compliant substrates Materials Research Society Symposium Proceedings. 1078: 16-21
Cherenack KH, Kattamis AZ, Hekmatshoar B, et al. (2007) Amorphous-silicon thin-film transistors fabricated at 300 °C on a free-standing foil substrate of clear plastic Ieee Electron Device Letters. 28: 1004-1006
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