Anika Kumar, Ph.D.

Affiliations: 
2006 Rensselaer Polytechnic Institute, Troy, NY, United States 
Area:
Electronics and Electrical Engineering, Materials Science Engineering
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"Anika Kumar"

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Partha S. Dutta grad student 2006 RPI
 (Growth of thick lattice mismatched layers of gallium indium arsenic antimonide on gallium arsenide substrates from quaternary melts.)
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Publications

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Kumar A, Dutta PS. (2008) Liquid phase epitaxial growth of lattice mismatched InSb, GaInAs and GaInAsSb on GaAs substrates using a quaternary melt Journal of Crystal Growth. 310: 1647-1651
Kumar A, Sridaran S, Dutta PS. (2004) Atomically flat III-antimonide epilayers grown using liquid phase epitaxy International Journal of High Speed Electronics and Systems. 14: 652-657
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