Dongsheng Fan, Ph.D.
Affiliations: | 2013 | Electrical Engineering | University of Arkansas, Little Rock, AR |
Area:
Electronics and Electrical Engineering, Materials Science Engineering, NanotechnologyGoogle:
"Dongsheng Fan"Parents
Sign in to add mentor| Shui-Qing Yu | grad student | 2013 | University of Arkansas | |
| (III-V bismide optoelectronic devices.) | ||||
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Publications
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| Mazur YI, Dorogan VG, Dias L, et al. (2017) Luminescent properties of GaAsBi/GaAs double quantum well heterostructures Journal of Luminescence. 188: 209-216 |
| Steele JA, Lewis RA, Horvat J, et al. (2016) Surface effects of vapour-liquid-solid driven Bi surface droplets formed during molecular-beam-epitaxy of GaAsBi. Scientific Reports. 6: 28860 |
| Steele JA, Horvat J, Lewis RA, et al. (2015) Mechanism of periodic height variations along self-aligned VLS-grown planar nanostructures. Nanoscale |
| Steele JA, Lewis RA, Henini M, et al. (2014) Raman scattering reveals strong LO-phonon-hole-plasmon coupling in nominally undoped GaAsBi: optical determination of carrier concentration. Optics Express. 22: 11680-9 |
| Mazur YI, Dorogan VG, de Souza LD, et al. (2014) Effects of AlGaAs cladding layers on the luminescence of GaAs/GaAs1-xBix/GaAs heterostructures. Nanotechnology. 25: 035702 |
| Grant PC, Fan D, Mosleh A, et al. (2014) Rapid thermal annealing effect on GaAsBi/GaAs single quantum wells grown by molecular beam epitaxy Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 32 |
| Mazur YI, Teodoro MD, Dias De Souza L, et al. (2014) Low temperature magneto-photoluminescence of GaAsBi /GaAs quantum well heterostructures Journal of Applied Physics. 115 |
| Fan D, Grant PC, Yu SQ, et al. (2013) MBE grown GaAsBi/GaAs double quantum well separate confinement heterostructures Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 31 |
| Zeng Z, Morgan TA, Fan D, et al. (2013) Molecular beam epitaxial growth of Bi2Te3 and Sb 2Te3 topological insulators on GaAs (111) substrates: A potential route to fabricate topological insulator p-n junction Aip Advances. 3 |
| Fan D, Zeng Z, Dorogan VG, et al. (2013) Bismuth surfactant mediated growth of InAs quantum dots by molecular beam epitaxy Journal of Materials Science: Materials in Electronics. 24: 1635-1639 |