Jeffrey G. Cederberg, Ph.D.
Affiliations: | 2000 | University of Wisconsin, Madison, Madison, WI |
Area:
Chemical Engineering, Materials Science Engineering, Condensed Matter Physics, Electronics and Electrical EngineeringGoogle:
"Jeffrey Cederberg"Parents
Sign in to add mentor| Thomas F. Kuech | grad student | 2000 | UW Madison | |
| (Intrinsic and oxygen-related deep -level defects in phosphide-based-compound semiconductors grown by metal-organic vapor-phase epitaxy.) | ||||
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Publications
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| Sheng JJ, Leonhardt D, Han SM, et al. (2013) Empirical correlation for minority carrier lifetime to defect density profile in germanium on silicon grown by nanoscale interfacial engineering Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 31 |
| Bender DA, Cederberg JG, Wang C, et al. (2013) Development of high quantum efficiency GaAs/GaInP double heterostructures for laser cooling Applied Physics Letters. 102 |
| Lu TM, Bishop NC, Pluym T, et al. (2011) Enhancement-mode buried strained silicon channel quantum dot with tunable lateral geometry Applied Physics Letters. 99 |
| Cederberg JG, Lee SR. (2007) Surfactant effects associated with Te-doped InPAs alloys Applied Physics Letters. 91 |
| Slotte J, Gonzalez-Debs M, Kuech TF, et al. (2007) Influence of substrate doping and point defects on Al and Ga interdiffusion in AlSb/GaSb superlattice structures Journal of Applied Physics. 102 |
| Gonzalez-Debs M, Cederberg JG, Biefeld RM, et al. (2005) Photoluminescence studies on Al and Ga interdiffusion across (Al,Ga)Sb/ GaSb quantum well interfaces Journal of Applied Physics. 97 |
| Cederberg JG, Hafich MJ, Biefeld RM, et al. (2003) The preparation of InGa(As)Sb and Al(Ga)AsSb films and diodes on GaSb for thermophotovoltaic applications using metal-organic chemical vapor deposition Journal of Crystal Growth. 248: 289-295 |
| Biefeld RM, Cederberg JG, Peake GM, et al. (2001) The growth and characterization of GaInAsSb and AlGaAsSb on GaSb by metal-organic chemical vapor deposition Journal of Crystal Growth. 225: 384-390 |
| Cederberg JG, Bieg B, Huang J-, et al. (2000) Oxygen-related deep levels in Al0.5In0.5P grown by MOVPE Journal of Electronic Materials. 29: 426-429 |
| Bieg B, Cederberg JG, Kuech TF. (2000) High-temperature hysteretic electronic effects of (AlxGa1−x)0.5In0.5P (x>0.65) Journal of Electronic Materials. 29: 231-236 |