Fransiska Dwikusuma, Ph.D.

2003 University of Wisconsin, Madison, Madison, WI 
Materials Science Engineering, Chemical Engineering
"Fransiska Dwikusuma"


Sign in to add mentor
Thomas F. Kuech grad student 2003 UW Madison
 (Sapphire surface preparation and gallium nitride nucleation by hydride vapor phase epitaxy.)
BETA: Related publications


You can help our author matching system! If you notice any publications incorrectly attributed to this author, please sign in and mark matches as correct or incorrect.

Dwikusuma F, Kuech TF. (2003) X-ray photoelectron spectroscopic study on sapphire nitridation for GaN growth by hydride vapor phase epitaxy: Nitridation mechanism Journal of Applied Physics. 94: 5656-5664
Rickert KA, Ellis AB, Himpsel FJ, et al. (2003) X-ray photoemission spectroscopic investigation of surface treatments, metal deposition, and electron accumulation on InN Applied Physics Letters. 82: 3254-3256
Dwikusuma F, Mayer J, Kuech TF. (2003) Nucleation and initial growth kinetics of GaN on sapphire substrate by hydride vapor phase epitaxy Journal of Crystal Growth. 258: 65-74
Dwikusuma F, Kuech TF. (2003) The Effects of Sapphire Surface Treatments and Nitridation on GaN Nucleation Grown using Hydride Vapor Phase Epitaxy Materials Research Society Symposium - Proceedings. 764: 57-62
Dwikusuma F, Saulys D, Kuech TF. (2002) Study on sapphire surface preparation for III-nitride heteroepitaxial growth by chemical treatments Journal of the Electrochemical Society. 149
Rickert KA, Ellis AB, Kim JK, et al. (2002) X-ray photoemission determination of the Schottky barrier height of metal contacts to n-GaN and p-GaN Journal of Applied Physics. 92: 6671-6678
Dwikusuma F, Saulys D, Kuech TF. (2002) Study on chemical treatment and high temperature nitridation of sapphire for III-nitride heteroepitaxial growth Materials Research Society Symposium - Proceedings. 743: 67-72
See more...