Fransiska Dwikusuma, Ph.D.
Affiliations: | 2003 | University of Wisconsin, Madison, Madison, WI |
Area:
Materials Science Engineering, Chemical EngineeringGoogle:
"Fransiska Dwikusuma"Parents
Sign in to add mentor| Thomas F. Kuech | grad student | 2003 | UW Madison | |
| (Sapphire surface preparation and gallium nitride nucleation by hydride vapor phase epitaxy.) | ||||
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Publications
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| Dwikusuma F, Kuech TF. (2003) X-ray photoelectron spectroscopic study on sapphire nitridation for GaN growth by hydride vapor phase epitaxy: Nitridation mechanism Journal of Applied Physics. 94: 5656-5664 |
| Rickert KA, Ellis AB, Himpsel FJ, et al. (2003) X-ray photoemission spectroscopic investigation of surface treatments, metal deposition, and electron accumulation on InN Applied Physics Letters. 82: 3254-3256 |
| Dwikusuma F, Mayer J, Kuech TF. (2003) Nucleation and initial growth kinetics of GaN on sapphire substrate by hydride vapor phase epitaxy Journal of Crystal Growth. 258: 65-74 |
| Dwikusuma F, Kuech TF. (2003) The Effects of Sapphire Surface Treatments and Nitridation on GaN Nucleation Grown using Hydride Vapor Phase Epitaxy Materials Research Society Symposium - Proceedings. 764: 57-62 |
| Dwikusuma F, Saulys D, Kuech TF. (2002) Study on chemical treatment and high temperature nitridation of sapphire for III-nitride heteroepitaxial growth Materials Research Society Symposium - Proceedings. 743: 67-72 |
| Dwikusuma F, Saulys D, Kuech TF. (2002) Study on sapphire surface preparation for III-nitride heteroepitaxial growth by chemical treatments Journal of the Electrochemical Society. 149 |
| Rickert KA, Ellis AB, Kim JK, et al. (2002) X-ray photoemission determination of the Schottky barrier height of metal contacts to n-GaN and p-GaN Journal of Applied Physics. 92: 6671-6678 |
| Gu S, Zhang R, Shi Y, et al. (2001) The impact of initial growth and substrate nitridation on thick GaN growth on sapphire by hydride vapor phase epitaxy Journal of Crystal Growth. 231: 342-351 |