Steven P. Consiglio, Ph.D.
Affiliations: | 2007 | State University of New York, Albany, Albany, NY, United States |
Area:
Materials Science Engineering, General PhysicsGoogle:
"Steven Consiglio"Parents
Sign in to add mentorEric T. Eisenbraun | grad student | 2007 | SUNY Albany | |
(Metallorganic chemical vapor deposition and atomic layer deposition approaches for the growth of hafnium-based thin films from dialkylamide precursors for advanced CMOS gate stack applications.) |
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Publications
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Chae K, Lombardo SF, Tasneem N, et al. (2022) Local Epitaxial Templating Effects in Ferroelectric and Antiferroelectric ZrO. Acs Applied Materials & Interfaces |
Mukundan V, Beckmann K, Tapily K, et al. (2019) Structural Correlation of Ferroelectric Behavior in Mixed Hafnia-Zirconia High-k Dielectrics for FeRAM and NCFET Applications Mrs Advances. 4: 545-551 |
Rogers J, Choi H, Gassner S, et al. (2019) Visualizing metal/HfO2/SiO2/Si(001) interface electrostatic barrier heights with ballistic hole emission microscopy Journal of Applied Physics. 126: 195302 |
Bhuyian MN, Shao P, Sengupta A, et al. (2018) Post Plasma Oxidation Processed ALD Al2O3/Hf1-xZrxO2 Thin Films on Ge Substrates: Reliability Ecs Journal of Solid State Science and Technology. 7 |
Clark R, Tapily K, Yu K-, et al. (2018) Perspective: New process technologies required for future devices and scaling Apl Materials. 6: 58203 |
Dey S, Yu K, Consiglio S, et al. (2017) Atomic layer deposited ultrathin metal nitride barrier layers for ruthenium interconnect applications Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 35: 03E109 |
Dey S, Tapily K, Consiglio S, et al. (2016) Higher-k Tetragonal Phase Stabilization in Atomic Layer Deposited
Hf1-xZrxO2 (0 |
Consiglio S, Dey S, Yu K, et al. (2016) In Situ Ramp Anneal X-ray Diffraction Study of Atomic Layer Deposited Ultrathin TaN and Ta1-xAlxNyFilms for Cu Diffusion Barrier Applications Ecs Journal of Solid State Science and Technology. 5: P509-P513 |
Raley A, Thibaut S, Mohanty N, et al. (2016) Self-aligned quadruple patterning integration using spacer on spacer pitch splitting at the resist level for sub-32nm pitch applications Proceedings of Spie - the International Society For Optical Engineering. 9782 |
Ding YM, Misra D, Bhuyian MN, et al. (2016) Electrical characterization of dry and wet processed interface layer in Ge/High-K devices Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics. 34 |