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Xinnan Lin, Ph.D.

Affiliations: 
2007 Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong 
Area:
Electronics and Electrical Engineering
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"Xinnan Lin"
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Parents

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Mansun J. Chan grad student 2007 HKUST
 (Double Gate MOSFET technology and applications.)

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Publications

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Ding F, Dong D, Chen Y, et al. (2021) Robust Simulations of Nanoscale Phase Change Memory: Dynamics and Retention. Nanomaterials (Basel, Switzerland). 11
He H, Xiong C, Yin J, et al. (2020) Analytical Drain Current and Capacitance Model for Amorphous InGaZnO TFTs Considering Temperature Characteristics Ieee Transactions On Electron Devices. 67: 3637-3644
Hu H, Liu D, Chen X, et al. (2020) A Compact Phase Change Memory Model With Dynamic State Variables Ieee Transactions On Electron Devices. 67: 133-139
Chen X, Hu H, Huang X, et al. (2020) A SPICE Model of Phase Change Memory for Neuromorphic Circuits Ieee Access. 8: 95278-95287
Li W, Lou H, Lin X. (2020) Investigation of trench process variation on the recessed-gate junctionless MOSFETs considering the circuit application Semiconductor Science and Technology. 35: 85002
Zhang L, Ma C, Xiao Y, et al. (2019) A Dynamic Time Evolution Method for Concurrent Device-Circuit Aging Simulations Ieee Transactions On Electron Devices. 66: 184-190
Yang Y, Lou H, Lin X. (2018) High-k Spacer Consideration of Ultrascaled Gate-All-Around Junctionless Transistor in Ballistic Regime Ieee Transactions On Electron Devices. 65: 5282-5288
Wan W, Lou H, Xiao Y, et al. (2018) Source/Drain Engineered Charge-Plasma Junctionless Transistor for the Immune of Line Edge Roughness Effect Ieee Transactions On Electron Devices. 65: 1873-1879
Yuan M, Zhou H, Tseng Y, et al. (2018) Enhancing the Electrical Uniformity and Reliability of the HfO2-Based RRAM Using High-Permittivity Ta2O5 Side Wall Ieee Journal of the Electron Devices Society. 6: 627-632
Zhang L, Song D, Xiao Y, et al. (2018) On the Formulation of Self-Heating Models for Circuit Simulation Ieee Journal of the Electron Devices Society. 6: 291-297
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