Nabil S. Ashraf, Ph.D.
Affiliations: | 2011 | Electrical Engineering | Arizona State University, Tempe, AZ, United States |
Area:
Electronics and Electrical EngineeringGoogle:
"Nabil Ashraf"Parents
Sign in to add mentor| Dragica Vasileska | grad student | 2011 | Arizona State | |
| (Comparative Analysis of Simulation of Trap Induced Threshold Voltage Fluctuations for 45 nm Gate Length n-MOSFET and Analytical Model Predictions.) | ||||
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Publications
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| Wirth G, Vasileska D, Ashraf N, et al. (2012) Compact modeling and simulation of Random Telegraph Noise under non-stationary conditions in the presence of random dopants Microelectronics Reliability. 52: 2955-2961 |
| Ashraf N, Vasileska D. (2011) Static analysis of random telegraph noise in a 45-nm channel length conventional mosfet device: Threshold voltage and ON-current fluctuations Ieee Transactions On Nanotechnology. 10: 1394-1400 |
| Ashraf N, Vasileska D, Wirth G, et al. (2011) Accurate model for the threshold voltage fluctuation estimation in 45-nm channel length MOSFET devices in the presence of random traps and random dopants Ieee Electron Device Letters. 32: 1044-1046 |
| Camargo VVA, Ashraf N, Brusamarello L, et al. (2010) Impact of RDF and RTS on the performance of SRAM cells Journal of Computational Electronics. 9: 122-127 |
| Ashraf N, Vasileska D. (2009) 1/f Noise: Threshold voltage and ON-current fluctuations in 45 nm device technology due to charged random traps Journal of Computational Electronics. 8: 128-134 |