Gregory D. U'Ren, Ph.D.
Affiliations: | 2000 | University of California, Los Angeles, Los Angeles, CA |
Area:
Materials Science EngineeringGoogle:
"Gregory U'Ren"Parents
Sign in to add mentorMark S. Goorsky | grad student | 2000 | UCLA | |
(Elastic strain reduction of finite germanium(x) silicon(1-x)/silicon structures.) |
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Publications
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Fukuto H, Feichtinger P, U'Ren GD, et al. (2000) Misfit dislocation formation in p/p+ silicon vapor-phase epitaxy Journal of Crystal Growth. 209: 716-723 |
Huang FY, Chu MA, Tanner MO, et al. (2000) High-quality strain-relaxed SiGe alloy grown on implanted silicon-on-insulator substrate Applied Physics Letters. 76: 2680-2682 |
Leininger J, U'Ren GD, Moore CD, et al. (1999) Asymmetry of misfit-dislocation induced satellite peaks in semiconductor heterostructures Journal of Physics D: Applied Physics. 32 |
Koontz EM, U'Ren GD, Lim MH, et al. (1999) Overgrowth of (In,Ga)(As,P) on rectangular-patterned surfaces using gas source molecular beam epitaxy Journal of Crystal Growth. 198: 1104-1110 |
Leininger J, U'Ren GD, Goorsky MS. (1999) Initial strain relaxation in S |
Liu JL, Moore CD, U'Ren GD, et al. (1999) A surfactant-mediated relaxed Si0.5Ge0.5 graded layer with a very low threading dislocation density and smooth surface Applied Physics Letters. 75: 1586-1588 |
U'Ren GD, Goorsky MS, Koontz EM, et al. (1998) Analysis of lattice distortions in high-quality InGaAsP epitaxial overgrowth of rectangular-patterned InP gratings Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 16: 1381-1384 |
Koontz EM, Lim MH, Wong VV, et al. (1997) Preservation of rectangular-patterned InP gratings overgrown by gas source molecular beam epitaxy Applied Physics Letters. 71: 1400-1402 |
U'Ren GD, Goorsky MS, Meis-Haugen G, et al. (1996) Defect characterization of etch pits in ZnSe based epitaxial layers Applied Physics Letters. 69: 1089-1091 |
Petruzzello J, Haberern KW, Herko SP, et al. (1996) Characterization of low defect density blue-green lasers Journal of Crystal Growth. 159: 573-581 |