Ian Friel, Ph.D.

2005 Boston University, Boston, MA, United States 
Condensed Matter Physics, Materials Science Engineering
"Ian Friel"


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Theodore D. Moustakas grad student 2005 Boston University
 (Molecular beam epitaxy growth of aluminum gallium nitride/gallium nitride quantum wells and investigation of excitonic and intersubband transitions.)
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Cabalu JS, Bhattacharyya A, Thomidis C, et al. (2006) High power ultraviolet light emitting diodes based on GaNAlGaN quantum wells produced by molecular beam epitaxy Journal of Applied Physics. 100
Cabalu JS, Thomidis C, Friel I, et al. (2005) Nitride LEDs based on flat and "wrinkled" quantum wells Progress in Biomedical Optics and Imaging - Proceedings of Spie. 5732: 185-196
Friel I, Thomidis C, Moustakas TD. (2005) Ultraviolet electroabsorption modulator based on AlGaNGaN multiple quantum wells Journal of Applied Physics. 97
Friel I, Driscoll K, Kulenica E, et al. (2005) Investigation of the design parameters of AlN/GaN multiple quantum wells grown by molecular beam epitaxy for intersubband absorption Journal of Crystal Growth. 278: 387-392
Xu T, Thomidis C, Friel I, et al. (2005) Growth and silicon doping of AlGaN films in the entire alloy composition by molecular beam epitaxy Physica Status Solidi C: Conferences. 2: 2220-2223
Friel I, Thomidis C, Moustakas TD. (2004) Well width dependence of disorder effects on the optical properties of AlGaN/GaN quantum wells Applied Physics Letters. 85: 3068-3070
Friel I, Thomidis C, Fedyunin Y, et al. (2004) Investigation of excitons in AlGaN/GaN multiple quantum wells by lateral photocurrent and photoluminescence spectroscopies Journal of Applied Physics. 95: 3495-3502
Stacey WF, Lamarre P, Murguia J, et al. (2004) GaN devices for high-efficiency, high power X-band radar performance enhancement grown on high thermal conductivity AlN substrates Collection of Technical Papers - 2nd International Energy Conversion Engineering Conference. 3: 1849-1858
Bhattacharyya A, Friel I, Iyer S, et al. (2003) Comparative study of GaN/AlGaN MQWs grown homoepitaxially on (1 1̄ 0 0) and (0 0 0 1) GaN Journal of Crystal Growth. 251: 487-493
Cabalu JS, Gunter LL, Friel I, et al. (2003) Design and fabrication of GaN-based permeable-base transistors Materials Research Society Symposium - Proceedings. 798: 85-90
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