Oluwole A. Amusan, Ph.D.

Affiliations: 
2009 Vanderbilt University, Nashville, TN 
Area:
Electronics and Electrical Engineering
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"Oluwole Amusan"

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Lloyd W. Massengill grad student 2009 Vanderbilt
 (Effects of single-event-induced charge sharing in sub-100 nm bulk CMOS technologies.)
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Publications

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Amusan OA, Bhuva BL, Casey MC, et al. (2010) Test circuit for measuring single-event-induced charge sharing in deep-submicron technologies Ieee International Conference On Microelectronic Test Structures. 114-117
Kauppila JS, Sternberg AL, Alles ML, et al. (2009) A bias-dependent single-event compact model implemented into BSIM4 and a 90 nm CMOS process design kit Ieee Transactions On Nuclear Science. 56: 3152-3157
Amusan OA, Casey MC, Bhuva BL, et al. (2009) Laser verification of charge sharing in a 90 nm Bulk CMOS process Ieee Transactions On Nuclear Science. 56: 3065-3070
Dasgupta S, Amusan OA, Alles ML, et al. (2009) Use of a contacted buried n+ layer for single event mitigation in 90 nm CMOS Ieee Transactions On Nuclear Science. 56: 2008-2013
Amusan OA, Massengill LW, Baze MP, et al. (2009) Mitigation techniques for single-event-induced charge sharing in a 90-nm bulk CMOS process Ieee Transactions On Device and Materials Reliability. 9: 311-317
Casey MC, Bhuva BL, Nation SA, et al. (2009) Single-event effects on ultra-low power CMOS circuits Ieee International Reliability Physics Symposium Proceedings. 194-198
Baze MP, Hughlock B, Wert J, et al. (2008) Angular Dependence of Single Event Sensitivity in Hardened Flip/Flop Designs Ieee Transactions On Nuclear Science. 55: 3295-3301
Balasubramanian A, McMorrow D, Nation SA, et al. (2008) Pulsed laser single-event effects in highly scaled CMOS technologies in the presence of dense metal coverage Ieee Transactions On Nuclear Science. 55: 3401-3406
Amusan OA, Fleming PR, Bhuva BL, et al. (2008) Laser verification of on-chip charge-collection measurement circuit Ieee Transactions On Nuclear Science. 55: 3309-3313
Narasimham B, Amusan OA, Bhuva BL, et al. (2008) Extended SET pulses in sequential circuits leading to increased SE vulnerability Ieee Transactions On Nuclear Science. 55: 3077-3081
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