John B. Matovu, Ph.D.
Affiliations: | 2013 | Chemical Engineering | Clarkson University, Potsdam, NY, United States |
Area:
General Engineering, Chemical Engineering, Inorganic Chemistry, Materials Science EngineeringGoogle:
"John Matovu"Parents
Sign in to add mentorSuryadevara V. Babu | grad student | 2013 | Clarkson University | |
(Chemical mechanical polishing of Indium phosphide, Gallium arsenide and Indium gallium arsenide films and related environment and safety aspects.) |
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Publications
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Matovu JB, Ong P, Teugels LG, et al. (2014) Chemical mechanical planarization of patterned InP in shallow trench isolation (STI) template structures using hydrogen peroxide-based silica slurries containing oxalic acid or citric acid Microelectronic Engineering. 116: 17-21 |
Matovu JB, Ong P, Leunissen LHA, et al. (2013) Fundamental investigation of chemical mechanical polishing of gaas in silica dispersions: Material removal and arsenic trihydride formation pathways Ecs Journal of Solid State Science and Technology. 2 |
Matovu JB, Ong P, Leunissen LHA, et al. (2013) Use of multifunctional carboxylic acids and hydrogen peroxide to improve surface quality and minimize phosphine evolution during chemical mechanical polishing of indium phosphide surfaces Industrial and Engineering Chemistry Research. 52: 10664-10672 |
Matovu JB, Penta NK, Peddeti S, et al. (2011) Chemical mechanical polishing of Ge in hydrogen peroxide-based silica slurries: Role of ionic strength Journal of the Electrochemical Society. 158 |
Penta NK, Matovu JB, Veera PRD, et al. (2011) Role of polycation adsorption in poly-Si, SiO 2 and Si 3N 4 removal during chemical mechanical polishing: Effect of polishing pad surface chemistry Colloids and Surfaces a: Physicochemical and Engineering Aspects. 388: 21-28 |