Md. I. Mahmud, Ph.D.
Affiliations: | 2013 | Electrical Engineering | University of Texas at Arlington, Arlington, TX, United States |
Area:
Electronics and Electrical EngineeringGoogle:
"Md. Mahmud"Parents
Sign in to add mentor| Zeynep Celik-Butler | grad student | 2013 | UT Arlington | |
| (Investigation of degradation in advanced analog MOS technologies.) | ||||
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Publications
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| Çelik-Butler Z, Mahmud MI, Hao P, et al. (2015) Determination of active oxide trap density and 1/f noise mechanism in RESURF LDMOS transistors Solid-State Electronics. 111: 141-146 |
| Nour M, Mahmud MI, Celik-Butler Z, et al. (2013) Variability of random telegraph noise in analog MOS transistors 2013 22nd International Conference On Noise and Fluctuations, Icnf 2013 |
| Mahmud MI, Celik-Butler Z, Hao P, et al. (2013) Review of LDMOS time dependent degradation based on low-frequency noise modeling 2013 22nd International Conference On Noise and Fluctuations, Icnf 2013 |
| Mahmud MI, Çelik-Butler Z, Hao P, et al. (2012) Effect of stress-induced degradation in LDMOS 1/f noise characteristics Ieee Electron Device Letters. 33: 107-109 |
| Mahmud MI, Çelik-Butler Z, Cheng X, et al. (2012) Experimental analysis of DC and noise parameter degradation in n-channel reduced surface field (RESURF) LDMOS transistors Proceedings of the International Symposium On Power Semiconductor Devices and Ics. 311-314 |
| Mahmud MI, Çelik-Butler Z, Hao P, et al. (2012) Correlation of 1/f noise and high-voltage-stress-induced degradation in LDMOS Ieee International Reliability Physics Symposium Proceedings |
| Mahmud MI, Çelik-Butler Z, Hao P, et al. (2011) Low-frequency noise and stress-induced degradation in LDMOS Proceedings of the Ieee 21st International Conference On Noise and Fluctuations, Icnf 2011. 352-355 |