B Jayant Baliga
Affiliations: | Electrical Engineering | North Carolina State University, Raleigh, NC |
Area:
Electronics and Electrical EngineeringGoogle:
"B Baliga"Children
Sign in to add trainee| Madhur Bobde | grad student | 2000 | NCSU |
| Ravi K. Chilukuri | grad student | 2000 | NCSU |
| Ayse M. Ozbek | grad student | 2011 | NCSU |
| Woongje Sung | grad student | 2012 | NCSU |
| Edward R. Van Brunt | grad student | 2013 | NCSU |
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Publications
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| Kanale A, Cheng TH, Han KJ, et al. (2020) 1.2 kV, 10 A, 4H-SiC Bi-Directional Field Effect Transistor (BiDFET) with Low On-State Voltage Drop Materials Science Forum. 1004: 872-881 |
| Agarwal A, Kanale A, Han KJ, et al. (2020) Experimental Study of Switching and Short-Circuit Performance of 1.2 kV 4H-SiC Accumulation and Inversion Channel Power MOSFETs Materials Science Forum. 1004: 789-794 |
| Han KJ, Kanale A, Baliga BJ, et al. (2020) Demonstration of Superior Static, Dynamic, and Short-Circuit Performance of 1.2 kV 4H-SiC Split-Gate Octagonal Cell MOSFETs Compared with Linear, Square, and Hexagonal Topologies Materials Science Forum. 1004: 783-788 |
| Kanale A, Baliga BJ. (2020) A New User-Configurable Method to Improve Short Circuit Ruggedness of 1.2 kV SiC Power MOSFETs Ieee Transactions On Power Electronics. 1-1 |
| Kanale A, Baliga BJ. (2020) Enhancing Short Circuit Capability of 1.2-kV Si IGBT Using a Gate-Source Shorted Si Depletion Mode MOSFET in Series With the Emitter Ieee Transactions On Power Electronics. 35: 6350-6361 |
| Agarwal A, Han K, Baliga BJ. (2020) Corrections to ā600 V 4H-SiC MOSFETs Fabricated in Commercial Foundry With Reduced Gate Oxide Thickness of 27 nm to Achieve IGBT-Compatible Gate Drive of 15 Vā [Nov 19 1792-1795] Ieee Electron Device Letters. 41: 195-195 |
| Baliga BJ. (2020) Third Generation PRESiCETM Technology for Manufacturing SiC Power Devices in a 6-inch Commercial Foundry Ieee Journal of the Electron Devices Society. 1-1 |
| Agarwal A, Han K, Baliga BJ. (2020) 2.3 kV 4H-SiC Accumulation-Channel Split-Gate Planar Power MOSFETs With Reduced Gate Charge Ieee Journal of the Electron Devices Society. 8: 499-504 |
| Kanale A, Han KJ, Baliga BJ, et al. (2019) Superior Short Circuit Performance of 1.2kV SiC JBSFETs Compared to 1.2kV SiC MOSFETs Materials Science Forum. 963: 797-800 |
| Kanale A, Baliga BJ, Han KJ, et al. (2019) Experimental Study of High-Temperature Switching Performance of 1.2kV SiC JBSFET in Comparison with 1.2kV SiC MOSFET Materials Science Forum. 963: 625-628 |