Ishiang Shih
Affiliations: | Electrical and Computer Engineering | McGill University, Montreal, QC, Canada |
Area:
Electronics and Electrical Engineering, Materials Science EngineeringGoogle:
"Ishiang Shih"Children
Sign in to add trainee| Feng Y. Gan | grad student | 2002 | McGill |
| Jonathan E. Greenspan | grad student | 2003 | McGill |
| Hadley F. Myers | grad student | 2012 | McGill |
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Publications
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| Zhou B, Kong X, Vanka S, et al. (2018) Gallium nitride nanowire as a linker of molybdenum sulfides and silicon for photoelectrocatalytic water splitting. Nature Communications. 9: 3856 |
| Qu J, Wang R, Sun Y, et al. (2018) Characterizing the electrical breakdown properties of single n-i-n-n+:GaN nanowires Applied Physics Letters. 113: 193103 |
| Wang R, Ra YH, Wu Y, et al. (2016) Tunable, full-color nanowire light emitting diode arrays monolithically integrated on Si and sapphire Proceedings of Spie - the International Society For Optical Engineering. 9748 |
| Park S, Champness CH, Shih I. (2016) Effect of sodium diffused into Bridgman CuInSe |
| Zhao S, Connie AT, Dastjerdi MH, et al. (2015) Aluminum nitride nanowire light emitting diodes: Breaking the fundamental bottleneck of deep ultraviolet light sources. Scientific Reports. 5: 8332 |
| Nguyen HP, Djavid M, Woo SY, et al. (2015) Engineering the carrier dynamics of InGaN nanowire white light-emitting diodes by distributed p-AlGaN electron blocking layers. Scientific Reports. 5: 7744 |
| Wang R, Liu X, Shih I, et al. (2015) High efficiency, full-color AlInGaN quaternary nanowire light emitting diodes with spontaneous core-shell structures on Si Applied Physics Letters. 106 |
| Park S, Champness CH, Shih I. (2015) Characteristics of XPS Se 3d peaks in crystalline Bridgman CuInSe |
| Salehzadeh O, Tran NH, Liu X, et al. (2014) Exciton kinetics, quantum efficiency, and efficiency droop of monolayer MoS₂ light-emitting devices. Nano Letters. 14: 4125-30 |
| Connie AT, Nguyen HPT, Sadaf SM, et al. (2014) Engineering the color rendering index of phosphor-free InGaN/(Al)GaN nanowire white light emitting diodes grown by molecular beam epitaxy Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 32 |